Observation of the metallic mosaic phase in 1T-TaS2 at equilibrium

The transition-metal dichalcogenide tantalum disulphide (1T-TaS2) hosts a commensurate charge density wave (CCDW) at temperatures below 165 K where it also becomes insulating. The low temperature CCDW phase can be driven into a metastable mosaic phase by means of either laser or voltage pulses, which shows a large density of CDW domain walls as well as a closing of the electronic band gap. The exact origins of this pulse-induced metallic mosaic are not yet fully understood. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we observe the occurrence of such a metallic mosaic phase on the surface of TaS2 without prior pulse excitation over continuous areas larger than 100 x 100 nm2 and macroscopic areas on the mil-limeter scale. We attribute the appearance of the mosaic phase to the presence of surface defects which cause the formation of the characteristic dense domain wall network. Based on our STM measurements, we further argue how the appearance of the metallic behavior in the mosaic phase could be explained by local stacking differences of the top layer. Thus we provide a potential avenue to explain the origin of the pulse-induced mosaic phase.

Automated summary

The transition-metal dichalcogenide tantalum disulphide (1T-TaS2) exhibits a commensurate charge density wave (CCDW) phase below 165 K. This CCDW phase can be transformed into a metastable metallic mosaic phase by laser or voltage pulses. In this study, scanning tunneling microscopy and spectroscopy (STM/STS) were used to observe the occurrence of the metallic mosaic phase on the surface of TaS2 without prior pulse excitation. Surface defects are believed to contribute to the formation of a dense domain wall network, which is responsible for the metallic behavior in the mosaic phase.