Related references
Note: Only part of the references are listed.Kinetic modeling of interfacial abruptness in axial nanowire heterostructures
E. D. Leshchenko et al.
NANOTECHNOLOGY (2023)
Theory of diffusion-induced selective area growth of III-V nanostructures
Vladimir G. Dubrovskii
PHYSICAL REVIEW MATERIALS (2023)
Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch
Didem Dede et al.
NANOTECHNOLOGY (2022)
Assembling your nanowire: an overview of composition tuning in ternary III-V nanowires
Masoomeh Ghasemi et al.
NANOTECHNOLOGY (2021)
Vapor - Solid distribution of silicon germanium chemical vapor deposition determined with classical thermodynamics
Pierre Tomasini
JOURNAL OF CRYSTAL GROWTH (2021)
Dynamics of Droplet Consumption in Vapor-Liquid-Solid III-V Nanowire Growth
Anton Pishchagin et al.
CRYSTAL GROWTH & DESIGN (2021)
Compositional Correlation between the Nanoparticle and the Growing Au-Assisted InxGa1-xAs Nanowire
Robin Sjokvist et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2021)
Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption
V. V. Fedorov et al.
NANOTECHNOLOGY (2021)
Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions
Xiaoming Yuan et al.
APPLIED PHYSICS REVIEWS (2021)
Development of Burton-Cabrera-Frank Theory for the Growth of a Non-Kossel Crystal via Chemical Reaction
Alexey Redkov et al.
CRYSTAL GROWTH & DESIGN (2020)
Role of Thermodynamics and Kinetics in the Composition of Ternary III-V Nanowires
Egor D. Leshchenko et al.
NANOMATERIALS (2020)
Evolution of the Length and Radius of Catalyst-Free III-V Nanowires Grown by Selective Area Epitaxy
Vladimir G. Dubrovskii
ACS OMEGA (2019)
From diffusion limited to incorporation limited growth of nanowires
Jonas Johansson et al.
JOURNAL OF CRYSTAL GROWTH (2019)
Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
Pavel Aseev et al.
NANO LETTERS (2019)
Compositional control of homogeneous InGaN nanowires with the In content up to 90%
Mohammed Zeghouane et al.
NANOTECHNOLOGY (2019)
III-V ternary nanowires on Si substrates: growth, characterization and device applications
Giorgos Boras et al.
JOURNAL OF SEMICONDUCTORS (2019)
Nucleation-limited composition of ternary III-V nanowires forming from quaternary gold based liquid alloys
Egor D. Leshchenko et al.
CRYSTENGCOMM (2018)
Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures
V. G. Dubrovskii
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications
Baodan Liu et al.
SMALL (2017)
Understanding the composition of ternary III-V nanowires and axial nanowire heterostructures in nucleation-limited regime
V. G. Dubrovskii et al.
MATERIALS & DESIGN (2017)
Bandgap engineering in semiconductor alloy nanomaterials with widely tunable compositions
Cun-Zheng Ning et al.
NATURE REVIEWS MATERIALS (2017)
Kinetically limited composition of ternary III-V nanowires
Jonas Johansson et al.
PHYSICAL REVIEW MATERIALS (2017)
III-V Nanomembranes for High Performance, Cost-Competitive Photovoltaics
Jongseung Yoon
MRS ADVANCES (2017)
Comparison of Modeling Strategies for the Growth of Heterostructures in III-V Nanowires
Frank Glas
CRYSTAL GROWTH & DESIGN (2017)
Composition of Gold Alloy Seeded InGaAs Nanowires in the Nucleation Limited Regime
Jonas Johansson et al.
CRYSTAL GROWTH & DESIGN (2017)
Origin of Spontaneous Core-Shell AIGaAs Nanowires Grown by Molecular Beam Epitaxy
V. G. Dubrovskii et al.
CRYSTAL GROWTH & DESIGN (2016)
Group V sensitive vapor-liquid-solid growth of Au-catalyzed and self-catalyzed III-V nanowires
Vladimir G. Dubrovskii
JOURNAL OF CRYSTAL GROWTH (2016)
Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AIGaAs Nanowires: Experiment and Theory
Giacomo Priante et al.
NANO LETTERS (2016)
III-V compound semiconductors: Growth and structures
Thomas F. Kuech
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS (2016)
SiGe Nanomembrane Quantum-Well Infrared Photodetectors
Habibe Durmaz et al.
ACS PHOTONICS (2016)
Fully Analytical Description for the Composition of Ternary Vapor-Liquid Solid Nanowires
Vladimir G. Dubrovskii
CRYSTAL GROWTH & DESIGN (2015)
Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires
V. G. Dubrovskii et al.
NANO LETTERS (2015)
Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires
Giacomo Priante et al.
NANO LETTERS (2015)
Stable Self-Catalyzed Growth of III-V Nanowires
J. Tersoff
NANO LETTERS (2015)
Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes
G. Tutuncuoglu et al.
NANOSCALE (2015)
Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires
A. S. Ameruddin et al.
NANOSCALE (2015)
InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Amira S. Ameruddin et al.
NANOTECHNOLOGY (2015)
Modelling of InGaP nanowires morphology and composition on molecular beam epitaxy growth conditions
A. Fakhr et al.
JOURNAL OF APPLIED PHYSICS (2014)
Diffusion-induced growth of nanowires: Generalized boundary conditions and self-consistent kinetic equation
V. G. Dubrovskii et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Growth and properties of InGaAs nanowires on silicon
Gregor Koblmueller et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2014)
Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
B. Mattias Borg et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
Jun Wu et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures
Chun-Yung Chi et al.
NANO LETTERS (2013)
InxGa1-xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
Parsian K. Mohseni et al.
NANO LETTERS (2013)
Predictive modeling of self-catalyzed III-V nanowire growth
Frank Glas et al.
PHYSICAL REVIEW B (2013)
High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
S. Hertenberger et al.
APPLIED PHYSICS LETTERS (2012)
Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
D. Jacobsson et al.
NANOTECHNOLOGY (2012)
Composition and Phase Tuned InGaAs Alloy Nanowires
Chan Su Jung et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2011)
Synthesis, assembly and applications of semiconductor nanomembranes
J. A. Rogers et al.
NATURE (2011)
Thermodynamic analysis of growth of ternary III-V semiconductor materials by molecular-beam epitaxy
Ye Zhi-cheng et al.
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA (2011)
Chemical potentials for Au-assisted vapor-liquid-solid growth of III-V nanowires
Frank Glas
JOURNAL OF APPLIED PHYSICS (2010)
Vapor fluxes on the apical droplet during nanowire growth by molecular beam epitaxy
Frank Glas
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2010)
Growth kinetics of a single InP1-xAsx nanowire
Jean-Christophe Harmand et al.
PHYSICAL REVIEW B (2010)
Analytical description of the metal-assisted growth of III-V nanowires: Axial and radial growths
Martin C. Plante et al.
JOURNAL OF APPLIED PHYSICS (2009)
Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures
Martin Heiss et al.
NANOTECHNOLOGY (2009)
Role of nonlinear effects in nanowire growth and crystal phase
V. G. Dubrovskii et al.
PHYSICAL REVIEW B (2009)
Diameter-dependent growth rate of InAs nanowires
L. E. Froberg et al.
PHYSICAL REVIEW B (2007)
Dependence of the growth rate of nanowires on the nanowire diameter
D Kashchiev
CRYSTAL GROWTH & DESIGN (2006)
Mass transport model for semiconductor nanowire growth
J Johansson et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2005)
The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy
GE Cirlin et al.
SEMICONDUCTORS (2005)
Thermodynamic analysis of InN and InxGa1-xN MOVPE using various nitrogen sources
Y Kumagai et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys
J Adhikari et al.
JOURNAL OF APPLIED PHYSICS (2004)
Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE
Y Kangawa et al.
APPLIED SURFACE SCIENCE (2003)
A thermodynamic assessment of the Ga-In-P system
C Li et al.
JOURNAL OF PHASE EQUILIBRIA (2000)
Share Paper
