Journal
LASER & PHOTONICS REVIEWS
Volume 10, Issue 2, Pages 307-316Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.201500250
Keywords
graphene; silicon modulator; integrated optical devices; optical interconnects; electro-absorption
Categories
Funding
- imec's Core Partner Program
- ERC-project ULPPIC
Ask authors/readers for more resources
High performance integrated optical modulators are highly desired for future optical interconnects. The ultrahigh bandwidth and broadband operation potentially offered by graphene based electro-absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro-absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 mu m-length hybrid graphene-Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best-in-class Si (Ge) modulators for future chip-level optical interconnects.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available