Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors

A theoretical model for simulating ionizing radiation effects on negative capacitance field-effect transistors (NCFETs) with a metal-ferroelectric-insulator-semiconductor (MFIS) structure was established. Based on the model, the effects of total ionizing dose (TID) and dose rate on the surface potential, ferroelectric capacitance, voltage amplification factor, and transfer characteristics of NCFETs were investigated. The simulation results demonstrated that, with the increase in total dose, the curves of surface potential versus gate voltage and driving current versus gate voltage shift left significantly, resulting in the point of voltage amplification shifting left. Meanwhile, with the increase in dose rate, the amplitude of both the surface potential and driving current decreases slightly. Meanwhile, the derived result indicated that relatively thin ferroelectric thickness can effectively reduce the effect of TID. It is expected that this model can be helpful for analyzing the radiation effects of NCFETs.

Automated summary

A theoretical model was established to simulate the ionizing radiation effects on NCFETs with an MFIS structure. The effects of TID and dose rate on the surface potential, ferroelectric capacitance, voltage amplification factor, and transfer characteristics of NCFETs were investigated based on the model. The simulation results showed that the increase in total dose shifted the curves of surface potential and driving current significantly to the left, resulting in a leftward shift of the voltage amplification point. Meanwhile, the increase in dose rate slightly decreased the amplitude of both the surface potential and driving current. Additionally, the derived result indicated that a relatively thin ferroelectric thickness can effectively reduce the effect of TID.