4.7 Article

Controllable extrinsic ion transport in two-dimensional perovskite films for reproducible, low-voltage resistive switching

Related references

Note: Only part of the references are listed.
Article Materials Science, Multidisciplinary

Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses

Seung Ju Kim et al.

Summary: Halide perovskites, in the vertically aligned form, demonstrate remarkable improvements in multilevel analog memristive characteristics, plasticity, and classification accuracy, attributed to the vertically well-aligned lead iodide octahedra as the ion transport channel, as confirmed by first-principles calculations.

MATERIALS TODAY (2022)

Article Chemistry, Multidisciplinary

Ambient Stable All Inorganic CsCu2I3 Artificial Synapses for Neurocomputing

Kyung Ju Kwak et al.

Summary: This study demonstrates the use of environmentally friendly and highly air stable CsCu2I3 perovskite films as the active layer in artificial synapses, showing excellent synaptic plasticity and learning accuracy in deep neural networks.

NANO LETTERS (2022)

Article Chemistry, Physical

Halide Diffusion Equilibrium and Its Impact on Efficiency Evolution of Perovskite Solar Cells

Qing Li et al.

Summary: Understanding the diffusion equilibrium of halide components in perovskite solar cells is crucial for addressing their instability issue. Experimental and theoretical studies have shown that halide components diffuse from perovskite to fullerene layers, affecting the efficiency of PSCs. A predoping strategy is developed to achieve halide diffusion equilibrium and ensure stable power output of PSCs.

ADVANCED ENERGY MATERIALS (2022)

Review Chemistry, Multidisciplinary

2D Material Based Synaptic Devices for Neuromorphic Computing

Guiming Cao et al.

Summary: This article provides a comprehensive review of synaptic devices based on 2D materials, including their advantages, challenges, and future development strategies.

ADVANCED FUNCTIONAL MATERIALS (2021)

Review Chemistry, Multidisciplinary

Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices

Emanuel Carlos et al.

Summary: Metal oxide resistive switching memories are crucial for the requirements of the Internet of Things, and solution-based devices offer advantages such as high flexibility and low cost. These devices are emergent and promising non-volatile memories for future electronics.

ADVANCED MATERIALS (2021)

Review Multidisciplinary Sciences

Competing memristors for brain-inspired computing

Seung Ju Kim et al.

Summary: Inspired by the human brain, memristor-based neuromorphic computing systems can store multiple values by changing resistance and simulate artificial synapses in brain-inspired computing. Research has shown that these computing systems can learn, infer, and even create using various artificial neural networks.

ISCIENCE (2021)

Article Engineering, Electrical & Electronic

Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

Yesheng Li et al.

Summary: Memristors based on pentagonal palladium diselenide demonstrate anomalous resistive switching behavior with two interchangeable reset modes, showing good switching performance and stability.

NATURE ELECTRONICS (2021)

Article Chemistry, Physical

Halide Perovskites for Memristive Data Storage and Artificial Synapses

Kyung Ju Kwak et al.

Summary: Halide perovskites are noted for their exotic properties and have shown promise for use in memristors, particularly in resistive switching memory devices and artificial synapses for neuromorphic computing. Current research focuses on state-of-the-art perovskite-based memristive devices and opportunities to improve their commercial viability.

JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2021)

Article Multidisciplinary Sciences

All-inorganic perovskite quantum dot light-emitting memories

Meng-Cheng Yen et al.

Summary: The researchers utilized the phenomenon of electric field induced ion migration in perovskite quantum dots to realize resistive random-access memory and light-emitting electrochemical cell functionalities in a new device. By modulating bias polarity, the device can switch from a memory state to a light-emitting cell state within milliseconds, and they also demonstrated a fully perovskite-based light-emitting memory operating at 5 kHz.

NATURE COMMUNICATIONS (2021)

Article Chemistry, Multidisciplinary

Synthesis of benzo[b]phosphole-based alkynylgold(I) complexes with resistive memory properties modulated by donor-acceptor chromophores

Yat-Hin Cheng et al.

Summary: A class of alkynylgold(I) complexes based on benzo[b]phosphole ligands have been synthesized and characterized, exhibiting strong luminescence in toluene with tunable emission maxima and satisfactory resistive memory behaviors. The electronic properties of these complexes are strongly influenced by the gold(I) metal center and the auxiliary ligand, leading to observed resistive switching and memory behavior.

SMARTMAT (2021)

Article Chemistry, Multidisciplinary

Vertical-organic-nanocrystal-arrays for crossbar memristors with tuning switching dynamics toward neuromorphic computing

Fangxu Yang et al.

Summary: The vertical-organic-nanocrystal-arrays (VONAs) present a viable solution to the challenges faced by Memristors, with its perfect one-dimensional structure allowing for precise control of conducting filaments and a wide range of resistance states, enabling large-scale device fabrication. This technology has the potential to effectively mimic various types of synaptic plasticity, showing promise for future applications.

SMARTMAT (2021)

Review Nanoscience & Nanotechnology

From bulk to molecularly thin hybrid perovskites

Kai Leng et al.

NATURE REVIEWS MATERIALS (2020)

Review Nanoscience & Nanotechnology

Memory devices and applications for in-memory computing

Abu Sebastian et al.

NATURE NANOTECHNOLOGY (2020)

Article Nanoscience & Nanotechnology

Alloying conducting channels for reliable neuromorphic computing

Hanwool Yeon et al.

NATURE NANOTECHNOLOGY (2020)

Review Nanoscience & Nanotechnology

Semiconductor physics of organic-inorganic 2D halide perovskites

Jean-Christophe Blancon et al.

NATURE NANOTECHNOLOGY (2020)

Article Automation & Control Systems

Memristive Devices for New Computing Paradigms

In Hyuk Im et al.

ADVANCED INTELLIGENT SYSTEMS (2020)

Review Materials Science, Multidisciplinary

The strategies of filament control for improving the resistive switching performance

Teng Li et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Review Nanoscience & Nanotechnology

Metal halide perovskite nanostructures for optoelectronic applications and the study of physical properties

Yongping Fu et al.

NATURE REVIEWS MATERIALS (2019)

Article Chemistry, Multidisciplinary

Effect of interlayer spacing in layered perovskites on resistive switching memory

So-Yeon Kim et al.

NANOSCALE (2019)

Article Chemistry, Physical

Compositional and orientational control in metal halide perovskites of reduced dimensionality

Rafael Quintero-Bermudez et al.

NATURE MATERIALS (2018)

Article Multidisciplinary Sciences

Multi-inch single-crystalline perovskite membrane for high-detectivity flexible photosensors

Yucheng Liu et al.

NATURE COMMUNICATIONS (2018)

Article Engineering, Electrical & Electronic

Electronic synapses made of layered two-dimensional materials

Yuanyuan Shi et al.

NATURE ELECTRONICS (2018)

Article Engineering, Electrical & Electronic

Robust memristors based on layered two-dimensional materials

Miao Wang et al.

NATURE ELECTRONICS (2018)

Article Chemistry, Physical

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Sreetosh Goswami et al.

NATURE MATERIALS (2017)

Article Engineering, Electrical & Electronic

Comprehensive modeling of electrochemical metallization memory cells

Stephan Menzel

JOURNAL OF COMPUTATIONAL ELECTRONICS (2017)

Article Chemistry, Physical

Suppressed Ion Migration in Low-Dimensional Perovskites

Yun Lin et al.

ACS ENERGY LETTERS (2017)

Article Chemistry, Multidisciplinary

Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects

Xiaojian Zhu et al.

ADVANCED MATERIALS (2017)

Article Chemistry, Multidisciplinary

Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Jaeho Choi et al.

ADVANCED MATERIALS (2016)

Article Chemistry, Physical

Ruddlesden-Popper Hybrid Lead Iodide Perovskite 2D Homologous Semiconductors

Constantinos C. Stoumpos et al.

CHEMISTRY OF MATERIALS (2016)

Article Chemistry, Multidisciplinary

Charge-Carrier Dynamics in 2D Hybrid Metal-Halide Perovskites

Rebecca L. Milot et al.

NANO LETTERS (2016)

Article Multidisciplinary Sciences

High-efficiency two-dimensional Ruddlesden-Popper perovskite solar cells

Hsinhan Tsai et al.

NATURE (2016)

Article Chemistry, Multidisciplinary

Physics of the Switching Kinetics in Resistive Memories

Stephan Menzel et al.

ADVANCED FUNCTIONAL MATERIALS (2015)

Article Chemistry, Physical

Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

Nicolas Onofrio et al.

NATURE MATERIALS (2015)

Article Chemistry, Multidisciplinary

Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

Stefano Ambrogio et al.

ADVANCED MATERIALS (2014)

Article Multidisciplinary Sciences

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

Myoung-Jae Lee et al.

NATURE COMMUNICATIONS (2013)

Article Multidisciplinary Sciences

Observation of conducting filament growth in nanoscale resistive memories

Yuchao Yang et al.

NATURE COMMUNICATIONS (2012)

Review Chemistry, Multidisciplinary

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

Rainer Waser et al.

ADVANCED MATERIALS (2009)

Article Chemistry, Multidisciplinary

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

Sung Hyun Jo et al.

NANO LETTERS (2009)

Article Computer Science, Hardware & Architecture

Overview of candidate device technologies for storage-class memory

G. W. Burr et al.

IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)

Review Chemistry, Physical

Nanoionics-based resistive switching memories

RaineR Waser et al.

NATURE MATERIALS (2007)

Article Computer Science, Hardware & Architecture

2001 Technology Roadmap for Semiconductors

A Allan et al.

COMPUTER (2002)