High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications

Low-intensity light detection necessitates high-responsivity photodetectors. To achieve this, we report In0.53Ga0.47As/InAs/In0.53Ga0.47As quantum well (InAs QW) photo-field-effect-transistors (photo-FETs) inte-grated on a Si substrate using direct wafer bonding. Structure of the InAs QW channel was carefully designed to achieve higher effective mobility and a narrower bandgap compared with a bulk In0.53Ga0.47As, while suppressing the generation of defects due to lattice relaxations. High-performance 2.6 nm InAs QW photo-FETs were success-fully demonstrated with a high on/off ratio of 105 and a high effective mobility of 2370 cm2/(V & BULL; s). The outstand-ing transport characteristics in the InAs QW channel result in an optical responsivity 1.8 times greater than InGaAs photo-FETs and the fast rising/falling times. Further, we experimentally confirmed that the InAs QW photo-FET can detect light in the short-wavelength infrared (SWIR; 1.0-2.5 & mu;m) near 2 & mu;m thanks to bandgap engineering through InAs QW structures. Our result suggests that the InAs QW photo-FET is promising for high-responsivity and extended-range SWIR photodetector applications.& COPY; 2023 Chinese Laser Press

Automated summary

To achieve high-responsivity for low-intensity light detection, the research team integrated In0.53Ga0.47As/InAs/In0.53Ga0.47As quantum well photo-field-effect-transistors (photo-FETs) on a Si substrate using direct wafer bonding. The carefully designed InAs quantum well channel showed higher effective mobility and narrower bandgap compared to bulk In0.53Ga0.47As, with suppressed defect generation. The InAs quantum well photo-FETs demonstrated outstanding transport characteristics, resulting in 1.8 times higher optical responsivity than InGaAs photo-FETs and fast rising/falling times. The InAs quantum well photo-FETs also showed potential for short-wavelength infrared (SWIR) light detection in the 1.0-2.5 μm range through bandgap engineering.