Understanding the complementary resistive switching in egg albumen-based single sandwich structure with non-inert Al electrode

The concept of complementary resistive switching (CRS) has been proposed as a potential solution for mitigating the unwanted sneak path current intrinsic to large-scale crossbar memory arrays. In this study, CRS devices based on egg albumen are fabricated using non-inert Al layers as the top electrodes (TE). The Al/Albumen/indium tin oxide (ITO) single sandwich structure achieves stable and reproducible CRS behavior without requiring a forming process. The application of a compliance current leads to an evolution from CRS to bipolar resistive switching (BRS). Furthermore, the BRS analog switching feature enables the emulation of synaptic functions, like paired-pulse facilitation (PPF) and paired-pulse depression (PPD). Our systematic and in-depth analyses demonstrate that the CRS is due to the interfacial Schottky barriers originating from the Al electrode oxidation. Consequently, the resistance switching behavior in the albumen-based cells with inert Pt top electrodes can further validate this model. These findings provide significant insight into the role of non-inert electrodes and contribute to a comprehensive understanding of the CRS mechanism, which may facilitate the development of high-performance CRS biodevices.

Automated summary

In this study, stable and reproducible complementary resistive switching (CRS) behavior is achieved in egg albumen-based devices using non-inert aluminum as the top electrode. Applying a compliance current leads to the transformation from CRS to bipolar resistive switching (BRS) and enables the emulation of synaptic functions. It is found that the CRS is attributed to the interfacial Schottky barriers caused by aluminum electrode oxidation. These findings provide significant insights into the role of non-inert electrodes and contribute to a comprehensive understanding of the CRS mechanism, facilitating the development of high-performance CRS biodevices.