4.7 Article

PESNet 3.0: A WRN-Based Communication Network With 0.5 ns Synchronization Error for Large-Scale Modular Power Converters

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JESTPE.2022.3219353

Keywords

Synchronization; Phase locked loops; Clocks; Power electronics; Silicon carbide; Hardware; Logic gates; Communication network; distributed control; modular power converters; silicon carbide (SiC) MOSFET; synchronization (sync); white rabbit network (WRN)

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This article introduces the development of a PESNet 3.0 system network with sub-nanosecond synchronization error and gigabits-per-second data rate. The White Rabbit Network technology and simplified node-to-node phase-locked loop and improved precision time protocol model are used for frequency and phase locking. Finally, the experimental validation demonstrates the PESNet 3.0's synchronization error of +/- 0.5 ns at a 5 Gb/s data rate.
Emerging large-scale silicon-carbide (SiC)-based modular power converters are pursuing high-performance distributed control systems (DCSs). In particular, fast-switching-enabled novel control schemes raise the need for minimal synchronization error (SE) of communication networks. This article presents the development of a proposed power electronics system network (PESNet) 3.0 that features a sub-nanosecond (ns) SE and gigabits-per-second data rate. The White Rabbit Network (WRN) technology, originally developed for particle accelerators, has been embedded in PESNet 3.0 and tailored to be suited for large-scale high-frequency modular power converters. A simplified node-to-node phase-locked loop (N2N-PLL) and an improved precision time protocol (PTP) model has been proposed to lock both the frequency and phase of two independent clocks on two adjacent nodes. Subsequently, the stability analysis of the N2N-PLL is carried out with its closed-loop transfer function verified by digital perturbation injection (DPI). Finally, the experimental validation of PESNet 3.0 is demonstrated at both controller and converter levels. The latter is on a first-of-it-kind 10-kV SiC-MOSFET-based modular converter prototype operating at 12-kV dc-link voltage, 10-kHz switching frequency, and above 100-V/ns slew rate, verifying +/- 0.5 ns SE at 5 Gb/s data rate.

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