Deep Ultraviolet Photodetector: Materials and Devices

The application of deep ultraviolet detection (DUV) in military and civil fields has increasingly attracted the attention of researchers' attention. Compared with the disadvantages of organic materials, such as complex molecular structure and poor stability, inorganic materials are widely used in the field of DUV detection because of their good stability, controllable growth, and other characteristics. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional detectors. Herein, the development history and types of DUV detectors are briefly introduced. Typical UWBG detection materials and their preparation methods, as well as their research and application status in the field of DUV detection, are emphatically summarized and reviewed, including III-nitride semiconductors, gallium oxide, diamond, etc. Finally, problems pertaining to DUV detection materials, such as the growth of materials, the performance of devices, and their future development, are also discussed.

Automated summary

The application of deep ultraviolet detection (DUV) in military and civil fields has gained increasing attention from researchers. Inorganic materials are widely used in DUV detection due to their good stability and controllable growth, compared to the complex molecular structure and poor stability of organic materials. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the development of high-performance DUV photodetectors with different geometries, overcoming disadvantages in traditional detectors. This article provides a brief introduction to the development history and types of DUV detectors, and comprehensively summarizes and reviews typical UWBG detection materials and their methods of preparation, as well as their research and application status, including III-nitride semiconductors, gallium oxide, diamond, etc. Additionally, problems related to DUV detection materials, such as material growth, device performance, and future development, are discussed.