Epitaxial Integration of Dirac Semimetals with Si(001)

Topological semimetals contain novel combinations of properties that make them useful in a variety of applications, including optoelectronics, spintronics and low energy computing, and catalysis. Although they have been grown with high quality as bulk single crystals, incorporation with semiconductor substrates will ultimately be required to maximize their technological reach. Here, epitaxial growth of the Dirac semimetal Cd3As2 on Si(001) is demonstrated through two routes. First, Cd3As2(112) epilayers are grown on Si(001) via an intermediate CdTe(111) buffer layer. Second, Cd3As2(112) is grown directly on Si(001). This work sets the foundation for integration of novel semimetal materials with existing CMOS technology.

Automated summary

Topological semimetals, with their unique combination of properties, have various applications in optoelectronics, spintronics, low energy computing, and catalysis. While they have been grown as high-quality bulk single crystals, their integration with semiconductor substrates is necessary for maximizing their technological potential. This study demonstrates the epitaxial growth of the Dirac semimetal Cd3As2 on Si(001) through two different routes. This work lays the foundation for integrating novel semimetal materials with existing CMOS technology.