Journal
CRYSTALS
Volume 13, Issue 3, Pages -Publisher
MDPI
DOI: 10.3390/cryst13030416
Keywords
ZnO; MoS2; graphene; doping; memristor; resistive switching; RRAM
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This paper provides an overview of the influence of various modifications on ZnO-based RRAM. It presents the motivation for creating new memory technology and explains the resistive switching mechanism, including its response to active layer and electrode selection. A comparison of ZnO devices assembled via different deposition methods is made. The manuscript also reports additional treatment of the active layer and electrodes improving the performance. Furthermore, the paper highlights the influence of different dopants on the device characteristics and reviews previous investigations of including inserting layers and nanostructures into ZnO-based RRAM.
In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes. A comparison of ZnO devices assembled via different deposition methods is made. Additional treatment of the active layer and electrodes improving the performance are reported. This work gives an overview of the influence of different dopants on the characteristics of the device. The manuscript overviews the previous investigation of inclusion of inserting layers and nanostructures into ZnO-based RRAM.
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