ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)

In this paper, an overview of the influence of various modifications on ZnO-based RRAM has been conducted. Firstly, the motivation for creating new memory technology is presented. The resistive switching mechanism is explained, including its response to the selection of active layers and electrodes. A comparison of ZnO devices assembled via different deposition methods is made. Additional treatment of the active layer and electrodes improving the performance are reported. This work gives an overview of the influence of different dopants on the characteristics of the device. The manuscript overviews the previous investigation of inclusion of inserting layers and nanostructures into ZnO-based RRAM.

Automated summary

This paper provides an overview of the influence of various modifications on ZnO-based RRAM. It presents the motivation for creating new memory technology and explains the resistive switching mechanism, including its response to active layer and electrode selection. A comparison of ZnO devices assembled via different deposition methods is made. The manuscript also reports additional treatment of the active layer and electrodes improving the performance. Furthermore, the paper highlights the influence of different dopants on the device characteristics and reviews previous investigations of including inserting layers and nanostructures into ZnO-based RRAM.