4.6 Article

Towards Extended Gate Field Effect Transistor-Based Radiation Sensors: Impact of Thicknesses and Radiation Doses on Al-Doped Zinc Oxide Sensitivity

Journal

CRYSTALS
Volume 13, Issue 2, Pages -

Publisher

MDPI
DOI: 10.3390/cryst13020314

Keywords

X-rays sensor; Al-doped zinc oxide; EGFET; thin films; MOSFET

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Radiation measurements are crucial in various fields, and the development of cost-effective, sensitive, and compact radiation detection devices has improved its application. This study focuses on the performance of a low-cost X-ray radiation detector based on extended gate field effect transistors (EGFET). Different thicknesses of Al-doped Zinc oxide (AZO) were examined for sensitivity following X-ray irradiation. The response was analyzed in terms of threshold voltage shift, and the dependence on material composition and thickness was evaluated. These findings suggest that thin films could be a cost-effective alternative for real-time, room-temperature radiation detectors.
Radiation measurements are critical in radioanalytical, nuclear chemistry, and biomedical physics. Continuous advancement in developing economical, sensitive, and compact devices designed to detect and measure radiation has increased its capability in many applications. In this work, we presented and investigated the performance of a cost-effective X-ray radiation detector based on the extended gate field effect transistors (EGFET). We examined the sensitivity of Al-doped Zinc oxide (AZO) of varying thicknesses, fabricated by chemical bath deposition (CBD), following X-ray irradiation with low and high doses. EGFETs were used to connect samples for their detection capabilities. As a function of the absorbed dose, the response was analyzed based on the threshold voltage shift, and the sensitivity of each device was also evaluated. We demonstrated that thin films are less sensitive to radiation than their disk-type EG devices. However, performance aspects of the devices, such as radiation exposure sensitivity and active dosage region, were found to be significantly reliant on the composition and thickness of the materials used. These structures may be a cost-effective alternative for real-time, room-temperature radiation detectors.

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