4.6 Review

Recent Progress of Film Fabrication Process for Carbon-Based All-Inorganic Perovskite Solar Cells

Journal

CRYSTALS
Volume 13, Issue 4, Pages -

Publisher

MDPI
DOI: 10.3390/cryst13040679

Keywords

all-inorganic perovskite solar cells; thin film; film fabrication; high efficiency; stability

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Although the certified power conversion efficiency of organic-inorganic perovskite solar cells has reached 25.7%, their thermal and long-term stability is a major challenge due to volatile organic components. Carbon-based all-inorganic perovskite solar cells have exhibited high stability and low-cost advantages. Many astonishing developments have been achieved in this field.
Although the certified power conversion efficiency of organic-inorganic perovskite solar cells (PSCs) has reached 25.7%, their thermal and long-term stability is a major challenge due to volatile organic components. This problem has been a major obstacle to their large-scale commercialization. In the last few years, carbon-based all-inorganic perovskite solar cells (C-IPSCs) have exhibited high stability and low-cost advantages by adopting the all-inorganic component with cesium lead halide (CsPbI3-xBrx, x = 0 3) and eliminating the hole-transporting layer by using cheap carbon paste as the back electrode. So far, many astonishing developments have been achieved in the field of C-IPSCs. In particular, the unencapsulated CsPbBr3 C-IPSCs exhibit excellent stability over thousands of hours in an ambient environment. In addition, the power conversion efficiencies of CsPbI3 and CsPbI2Br C-IPSCs have exceeded 15%, which is close to that of commercial multicrystalline solar cells. Obtaining high-quality cesium lead halide-based perovskite films is the most important aspect in the preparation of high-performance C-IPSCs. In this review, the main challenges in the high-quality film fabrication process for high performance C-IPSCs are summarized and the film fabrication process strategies for CsPbBr3, CsPbIBr2, CsPbI2Br, and CsPbI3 are systematically discussed, respectively. In addition, the prospects for future film fabrication processes for C-IPSCs are proposed.

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