In Situ Study on Cu-to-Cu Thermal Compression Bonding

Cu-to-Cu thermal compression bonding (TCB) has emerged as a promising solution for ultrafine pitch packaging in 3D integrated circuit technologies. Despite the progress made by conventional Cu-to-Cu TCB methods in achieving good mechanical strength of the Cu bonds, the bonding processes generally require high temperature and high pressure, which may degrade the performance and reliability of the device. Therefore, it is imperative to investigate the processing parameters to understand the bonding mechanism and achieve effective TCB at a low temperature and low pressure. Here, we developed an in situ TCB technique inside a scanning electron microscope. The in situ TCB method enables a real-time observation of bonding development, which provides critical insights into how the texture and microstructure of Cu bumps may influence the creep and surface diffusion during the bonding process. This work features a strategy to advance our understanding of the bonding mechanisms and provides insight into tailoring the microstructure of Cu for bonding at a low temperature and low pressure.

Automated summary

Cu-to-Cu thermal compression bonding (TCB) is a promising solution for packaging in 3D integrated circuits, but the traditional methods require high temperature and high pressure, which affect device performance and reliability. Therefore, investigating processing parameters for low temperature and low pressure bonding is crucial.