4.6 Article

EBIC Imaging of Conductive Paths Formed in Graphene Oxide as a Result of Resistive Switching

Related references

Note: Only part of the references are listed.
Article Materials Science, Multidisciplinary

Measurements on Five Characterizing Properties of Graphene Oxide and Reduced Graphene Oxide Foils

Lorenzo Torrisi et al.

Summary: This paper presents the preparation of micrometric foils of graphene oxide in the laboratory and investigates their physical properties. The reduction of graphene oxide using different methods results in changes in the tested properties.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2022)

Article Chemistry, Physical

Calculation of the Absorbed Electron Energy 3D Distribution by the Monte Carlo Method, Presentation of the Proximity Function by Three Parameters α, β, η and Comparison with the Experiment

Alexander A. Svintsov et al.

Summary: This paper presents a program called ProxyFn for simulating electron scattering in layered materials. The calculations indicate that the absorbed energy density is three-dimensional, and the contribution of forward-scattered electrons can be better described by a power function rather than a Gaussian one. It is demonstrated that the classical two-dimensional proximity function with three parameters (alpha, beta, eta) can still be used for practical correction of the proximity effect. A method for determining these parameters from three-dimensional calculations using Monte Carlo simulation is proposed, and the obtained parameters are shown to agree well with experimental data for various substrates and electron energies. Therefore, a method for calculating the parameters of the classical proximity function for arbitrary layered substrates based on Monte Carlo simulation has been developed.

MATERIALS (2022)

Article Physics, Applied

Modification of the model of charging dielectrics under electron beam irradiation

E. I. Rau et al.

Summary: This paper briefly notes the drawbacks and contradictions of existing models for charging dielectric targets under irradiation. By reconsidering some postulates, the authors show that the equilibrium state of charging dielectrics is determined not only by the electron emission coefficient, but also by a critical value of the field near the surface of the target. The authors also highlight the significant influence of radiation-induced defects on the charging kinetics.

JOURNAL OF APPLIED PHYSICS (2022)

Article Chemistry, Multidisciplinary

Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices

Sergei Koveshnikov et al.

Summary: Graphene oxide, among various graphene derivatives, is the most studied material due to its reliable and repeatable resistive switching properties. Researchers have identified three operative mechanisms responsible for this resistive switching, including metallic-like filamentary conduction, contact resistance modification, and oxidation/reduction in the bulk of graphene oxide.

NANOMATERIALS (2022)

Article Automation & Control Systems

A Fully Integrated System-on-Chip Design with Scalable Resistive Random-Access Memory Tile Design for Analog in-Memory Computing

Fuxi Cai et al.

Summary: With the increasing demands of big data applications and deep learning, the industry has turned to artificial intelligence accelerators. Analog in-memory computing with emerging nonvolatile devices provides efficient hardware solutions for accelerating MAC operations. This study demonstrates an Applied Materials custom-designed system-on-chip using resistive random-access memory as the compute element for AI applications. The chip achieves high energy efficiency in MAC operations and is validated through simulations and experiments.

ADVANCED INTELLIGENT SYSTEMS (2022)

Editorial Material Materials Science, Ceramics

Implementing ceramic materials into neuromorphic memory devices through oxide-based memristors

Bethany X. Rutherford

AMERICAN CERAMIC SOCIETY BULLETIN (2021)

Article Physics, Applied

Experimental estimation of electron-hole pair creation energy in β-Ga2O3

E. B. Yakimov et al.

Summary: The applicability of using Electron Beam Induced Current (EBIC) measurements on Schottky barriers to obtain the mean electron-hole pair creation energy in beta-Ga2O3 has been demonstrated. When combined with Monte Carlo simulation, this approach yielded consistent data sets for Si, GaN, and 4H-SiC, in agreement with empirical expressions proposed for various semiconductors. The method was then successfully applied to beta-Ga2O3, where complications related to hole trapping in the material were carefully addressed, resulting in a mean electron-hole pair energy formation of 15.6eV, in reasonable agreement with predicted values.

APPLIED PHYSICS LETTERS (2021)

Review Crystallography

Study of Wide-Gap Semiconductors Using Electron-Beam Induced Current Method

E. B. Yakimov

Summary: The studies on wide-gap semiconductor materials using EBIC method were reviewed, analyzing the main methods for measuring the diffusion length of nonequilibrium carriers and discussing the reliability of obtained values. The possibilities of EBIC for detecting dislocations, studying their recombination activity, achieving high lateral resolution, and the influence of irradiation on electrical and optical properties were demonstrated. The results of studying recombination-enhanced dislocation glide under electron-beam irradiation in GaN and 4H-SiC were presented.

CRYSTALLOGRAPHY REPORTS (2021)

Review Materials Science, Multidisciplinary

Charging effect induced by electron beam irradiation: a review

Z. J. Ding et al.

Summary: This paper focuses on the charging effects induced by electron beam irradiation when characterizing nonconductive materials, highlighting the importance of theoretical investigations using the Monte Carlo method. Through Monte Carlo simulations and selected experiments, categories of charging effects, theoretical frameworks, and typical simulation results are introduced, followed by discussions on measures for minimizing charging effects.

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2021)

Article Chemistry, Physical

Investigation of bandgap alteration in graphene oxide with different reduction routes

Neeraj Sharma et al.

APPLIED SURFACE SCIENCE (2020)

Review Materials Science, Multidisciplinary

Resistive Switching in Graphene Oxide

Francisco J. Romero et al.

FRONTIERS IN MATERIALS (2020)

Article Engineering, Electrical & Electronic

Charging Effects in Al-SiO2-p-Si Structures After Low-Energy Electron Beam Irradiation

P. S. Vergeles et al.

JOURNAL OF ELECTRONIC MATERIALS (2020)

Article Physics, Condensed Matter

Origin of optical bandgap fluctuations in graphene oxide

Alessandro Henrique de Lima et al.

EUROPEAN PHYSICAL JOURNAL B (2020)

Article Chemistry, Physical

Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

M. Brzhezinskaya et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2020)

Review Multidisciplinary Sciences

Understanding memristive switching via in situ characterization and device modeling

Wen Sun et al.

NATURE COMMUNICATIONS (2019)

Article Materials Science, Multidisciplinary

Scanning TEM EBIC Imaging of Resistive Memory Switching Processes

B. C. Regan et al.

MICROSCOPY AND MICROANALYSIS (2018)

Review Materials Science, Multidisciplinary

Oxide-based RRAM materials for neuromorphic computing

XiaoLiang Hong et al.

JOURNAL OF MATERIALS SCIENCE (2018)

Article Engineering, Electrical & Electronic

Resistive Random Access Memory for Future Information Processing System

Huaqiang Wu et al.

PROCEEDINGS OF THE IEEE (2017)

Article Multidisciplinary Sciences

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Brian D. Hoskins et al.

NATURE COMMUNICATIONS (2017)

Proceedings Paper Physics, Applied

Electron beam induced excess carrier concentration

E. B. Yakimov

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14, NO 7 (2017)

Article Nanoscience & Nanotechnology

Transient Thermometry and High-Resolution Transmission Electron Microscopy Analysis of Filamentary Resistive Switches

Jonghan Kwon et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Chemistry, Multidisciplinary

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Suhas Kumar et al.

ADVANCED MATERIALS (2016)

Article Instruments & Instrumentation

Structural changes in graphene oxide thin film by electron-beam irradiation

Chetna Tyagi et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2016)

Review Chemistry, Physical

Memristive devices based on graphene oxide

Samuele Porro et al.

CARBON (2015)

Article Physics, Condensed Matter

Comparison of the Efficiency of 63Ni Beta-Radiation Detectors Made from Silicon and Wide-Gap Semiconductors

S. I. Zaitsev et al.

JOURNAL OF SURFACE INVESTIGATION (2014)

Article Physics, Applied

Resistive Switching in Al/Graphene Oxide/Al Structure

Gennady N. Panin et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2011)

Article Chemistry, Multidisciplinary

Improved Synthesis of Graphene Oxide

Daniela C. Marcano et al.

ACS NANO (2010)

Article Physics, Condensed Matter

Investigations of Electron Beam Induced Conductivity in Silicon Oxide Thin Films

S. S. Borisov et al.

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES (2010)

Article Physics, Condensed Matter

Monte Carlo simulation of the EBIC collection efficiency of a Schottky nanocontact

M. Ledra et al.

SUPERLATTICES AND MICROSTRUCTURES (2009)

Review Chemistry, Physical

Nanoionics-based resistive switching memories

RaineR Waser et al.

NATURE MATERIALS (2007)

Article Chemistry, Physical

A new examination of secondary electron yield data

YH Lin et al.

SURFACE AND INTERFACE ANALYSIS (2005)

Article Physics, Condensed Matter

Electron-beam-induced-current study of defects in GaN; experiments and simulation

EB Yakimov

JOURNAL OF PHYSICS-CONDENSED MATTER (2002)