Related references
Note: Only part of the references are listed.Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability
Hengbo Zhang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)
High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors
Yusaku Magari et al.
NATURE COMMUNICATIONS (2022)
The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides
Linfeng Lan et al.
NANOMATERIALS (2022)
Mechanism of Extraordinary High Mobility in Multilayered Amorphous Oxide Thin Film Transistor
Ji Ye Lee et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
Room temperature fabricated high performance IAZO thin film transistors with dual-active-layer structure and sputtered Ta2O5 gate insulator
Weidong Xu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2021)
Mobility-stability trade-off in oxide thin-film transistors
Yu-Shien Shiah et al.
NATURE ELECTRONICS (2021)
Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing
Min Seong Kim et al.
ACS APPLIED MATERIALS & INTERFACES (2021)
Effects of Active Layer Thickness on the Electrical Characteristics and Stability of High-Mobility Amorphous Indium-Gallium-Tin Oxide Thin-Film Transistors
Dae-Hwan Kim et al.
ELECTRONICS (2021)
The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors
Penghui He et al.
COMMUNICATIONS MATERIALS (2021)
TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides
Gi Woong Shim et al.
ADVANCED MATERIALS (2020)
Descriptors representing two- and three-body atomic distributions and their effects on the accuracy of machine-learned inter-atomic potentials
Ryosuke Jinnouchi et al.
JOURNAL OF CHEMICAL PHYSICS (2020)
Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing
Seohyun Maeng et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)
Role of the third metal oxide in In-Ga-Zn-O4 amorphous oxide semiconductors: Alternatives to gallium
Zhaofu Zhang et al.
JOURNAL OF APPLIED PHYSICS (2020)
Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
Junghwan Kim et al.
APL MATERIALS (2019)
Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer Deposition
Jun Yang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Defect Self-Compensation for High-Mobility Bilayer InGaZnO/In2O3 Thin-Film Transistor
Jiawei He et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor
Kuankuan Lu et al.
JOURNAL OF MATERIALS SCIENCE (2019)
Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping
Hua Xu et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 cm(2)/ V.s for High-Speed Operation
Jong-Heon Yang et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition
So-Jung Yoon et al.
RSC ADVANCES (2018)
Effect of double-stacked active layer on stability of Si-IZO thin-film transistor
Yooseong Lim et al.
MICROELECTRONIC ENGINEERING (2017)
Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors
Ablat Abliz et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure
Po-Tsun Liu et al.
APPLIED PHYSICS LETTERS (2016)
Silicon induced stability and mobility of indium zinc oxide based bilayer thin film transistors
Ram Narayan Chauhan et al.
APPLIED PHYSICS LETTERS (2016)
Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer
Ablat Abliz et al.
APPLIED PHYSICS LETTERS (2016)
Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers
Haiting Xie et al.
APPLIED SURFACE SCIENCE (2016)
Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations
GongTan Li et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Suppression in the Negative Bias Illumination Instability of ZnSnO Thin-Film Transistors Using Hafnium Doping by Dual-Target Magnetron Cosputtering System
Chuan-Xin Huang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage
Takio Kizu et al.
JOURNAL OF APPLIED PHYSICS (2016)
Accurate first-principles structures and energies of diversely bonded systems from an efficient density functional
Jianwei Sun et al.
NATURE CHEMISTRY (2016)
Negative bias illumination stress stability of dual-active layer amorphous indium-gallium-zinc-oxide thin-film transistor
Myeong-Ho Kim et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)
Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
Po-Tsun Liu et al.
RSC ADVANCES (2016)
Three-Dimensional Percolation and Performance of Nanocrystal Field-Effect Transistors
Willi Aigner et al.
PHYSICAL REVIEW APPLIED (2016)
Dual Electrical Behavior of Multivalent Metal Cation-Based Oxide and Its Application to Thin-Film Transistors with High Mobility and Excellent Photobias Stability
Myeong Gu Yun et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer
Jayapal Raja et al.
APPLIED PHYSICS LETTERS (2015)
Ultrafast carrier dynamics in SnOx thin films
Zhong-guo Li et al.
APPLIED PHYSICS LETTERS (2015)
High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices
Yen-Hung Lin et al.
ADVANCED SCIENCE (2015)
The Structure and Properties of Amorphous Indium Oxide
D. Bruce Buchholz et al.
CHEMISTRY OF MATERIALS (2014)
Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric
Y. Li et al.
CURRENT APPLIED PHYSICS (2014)
Effects of electron trapping and interface state generation on bias stress induced in indium-gallium-zinc oxide thin-film transistors
Chang-Hoon Han et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Theoretical description of charge transport in disordered organic semiconductors
S. D. Baranovskii
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2014)
Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor
Hong Yoon Jung et al.
SCIENTIFIC REPORTS (2014)
Effect of sputter power on the photobias stability of zinc-tin-oxide field-effect transistors
Bong Seob Yang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2014)
Chemical Stability and Electrical Performance of Dual-Active-Layered Zinc -Tin-Oxide/Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using a Solution Process
Chul Ho Kim et al.
ACS APPLIED MATERIALS & INTERFACES (2013)
Synergistic Approach to High-Performance Oxide Thin Film Transistors Using a Bilayer Channel Architecture
Xinge Yu et al.
ACS APPLIED MATERIALS & INTERFACES (2013)
Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors
Hyo Jin Kim et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2013)
Comparative studies on electrical bias temperature instabilities of In-Ga-Zn-O thin film transistors with different device configurations
Min-Ki Ryu et al.
SOLID-STATE ELECTRONICS (2013)
Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability
Hyun-Suk Kim et al.
ACS APPLIED MATERIALS & INTERFACES (2012)
Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
E. Fortunato et al.
ADVANCED MATERIALS (2012)
The Effects of Dual-Active-Layer Modulation on a Low-Temperature Solution-Processed Oxide Thin-Film Transistor
Woong Hee Jeong et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Amorphous Ge15Te85: density functional, high-energy x-ray and neutron diffraction study
J. Kalikka et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2012)
Influence of a highly doped buried layer for HfInZnO thin-film transistors
Eugene Chong et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition
W. J. Maeng et al.
APPLIED PHYSICS LETTERS (2011)
Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface
Ji-In Kim et al.
APPLIED PHYSICS LETTERS (2011)
Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
Kenji Nomura et al.
APPLIED PHYSICS LETTERS (2011)
Control of Threshold Voltage and Saturation Mobility Using Dual-Active-Layer Device Based on Amorphous Mixed Metal-Oxide-Semiconductor on Flexible Plastic Substrates
Michael A. Marrs et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data
Koichi Momma et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2011)
Comprehensive studies of the degradation mechanism in amorphous InGaZnO transistors by the negative bias illumination stress
Kwang Hwan Ji et al.
MICROELECTRONIC ENGINEERING (2011)
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
Hyeon-Kyun Noh et al.
PHYSICAL REVIEW B (2011)
Highly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active Layers
Jae Chul Park et al.
ADVANCED MATERIALS (2010)
O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors
Byungki Ryu et al.
APPLIED PHYSICS LETTERS (2010)
Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory
Toshio Kamiya et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Present status of amorphous In-Ga-Zn-O thin-film transistors
Toshio Kamiya et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2010)
Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
Toshio Kamiya et al.
JOURNAL OF DISPLAY TECHNOLOGY (2009)
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3
P. D. C. King et al.
PHYSICAL REVIEW B (2009)
Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
Jin-Seong Park et al.
APPLIED PHYSICS LETTERS (2008)
Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations
Kenji Nomura et al.
PHYSICAL REVIEW B (2007)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions
HJ Osten et al.
APPLIED PHYSICS LETTERS (2002)
Share Paper
