Device-to-Materials Pathway for Electron Traps Detection in Amorphous GeSe-Based Selectors

The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material-to-device multiscale technique, a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide is proposed. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. The metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material-device codesign and the optimization of novel technologies.

Automated summary

The choice of the ideal material for selector devices is a challenging task due to a lack of synergy between techniques correlating material properties with device characteristics. A material-to-device multiscale technique is proposed to characterize active traps in amorphous GeSe chalcogenide, providing valuable insights into the specific features of the materials. This metrological approach can be extended to optimize novel technologies and facilitate efficient materials-device codesign.