Effect of Electron Thermal Conductivity on Resonant Plasmonic Detection in Terahertz Hot-Electron Bolometers Based on Metal/Black-AsP/Graphene FETs

We analyze the operation of terahertz (THz) bolometric detectors based on field-effect transistor (FET) structures with graphene channels (GCs) and black-phosphorus and black-arsenic gate barrier layers (BLs). Such GC FETs use two-dimensional electron gas (2DEG) heating by the incident THz radiation leading to the thermionic emission of hot electrons from the GC via the BL into the gate. Due to the excitation of plasmonic oscillations in the GC by THz signals, the GC FET detector response can be pronouncedly resonant, leading to elevated values of the detector responsivity. The lateral thermal conductivity of the 2DEG and its Peltier cooling can markedly affect the GC FET responsivity, in particular its spectral characteristics. These effects should be considered for the optimization of GC FET detectors.

Automated summary

This article analyzes the operation of terahertz (THz) bolometric detectors based on field-effect transistor (FET) structures with graphene channels (GCs) and black-phosphorus and black-arsenic gate barrier layers (BLs). The detectors utilize the heating of a two-dimensional electron gas (2DEG) by THz radiation, leading to the emission of hot electrons into the gate via the BL. The excitation of plasmonic oscillations in the GC by THz signals results in a resonant detector response and increased responsivity.