Large Tunneling Magnetoresistance in Perpendicularly Magnetized Magnetic Tunnel Junctions Using Co75Mn25/Mo/Co20Fe60B20 Multilayers

We study the magnetic and electrical transport properties of magnetic tunnel junctions (MTJs) consist-ing of a Co75Mn25/Mo/Co20Fe60B20 multilayer prepared using a mass-production-compatible magnetron sputtering system. The Co75Mn25/Mo/Co20Fe60B20 multilayer sandwiched between two MgO layers exhibits remarkable perpendicular magnetic anisotropy, and a uniaxial magnetic anisotropy constant as large as 0.2 MJ/m3 is achieved by optimizing the Co75Mn25 layer thickness as well as the annealing temperature. The current-in-plane tunneling measurement reveals a large tunneling magnetoresistance of over 100% in perpendicularly magnetized MTJs. These experimental results indicate the applicability of Co75Mn25 alloy for magnetic random access memory devices.

Automated summary

The magnetic and electrical transport properties of magnetic tunnel junctions (MTJs) consisting of a Co75Mn25/Mo/Co20Fe60B20 multilayer were studied. By optimizing the Co75Mn25 layer thickness and annealing temperature, the Co75Mn25/Mo/Co20Fe60B20 multilayer sandwiched between two MgO layers exhibits remarkable perpendicular magnetic anisotropy with a uniaxial magnetic anisotropy constant as large as 0.2 MJ/m3. The current-in-plane tunneling measurement reveals a large tunneling magnetoresistance of over 100% in perpendicularly magnetized MTJs. These experimental results indicate the applicability of Co75Mn25 alloy for magnetic random access memory devices.