Plasma Nitridation Effect on β-Ga2O3 Semiconductors

The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including beta-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline beta-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline beta-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline beta-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.

Automated summary

The electrical and optoelectronic performance of semiconductor devices are significantly influenced by defects or crystal imperfections in the semiconductor. Oxygen vacancies are commonly found defects in metal oxide semiconductors, such as beta-Ga2O3, and act as electron trap sites below the conduction band edge. This study discusses the effects of plasma nitridation on polycrystalline beta-Ga2O3 thin films, showing that it effectively reduces the electron trap sites and improves the device performance for both electronics and optoelectronics.