Effect of a-SiCxNy:H Encapsulation on the Stability and Photoluminescence Property of CsPbBr3 Quantum Dots

The effect of a-SiCxNy:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH4, CH4, and NH3 as the precursors, on the stability and photoluminescence of CsPbBr3 quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr3 QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr3 QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr3 QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 ?degrees C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr3 QD thin films, thus holding potential for future developments in optoelectronic devices.

Automated summary

This study investigates the effect of a-SiCxNy:H encapsulation layers on the stability and photoluminescence of CsPbBr3 quantum dots (QDs). It is found that a high N content in the encapsulation layers leads to severe PL degradation of CsPbBr3 QDs. However, by reducing the N content, the PL degradation can be significantly minimized. The transition of the dominant phase in the encapsulation layer from SiNx to SiCxNy helps preserve the inherent PL characteristics of CsPbBr3 QDs and provides long-term stability.