Enhancement of the Electroluminescence from Amorphous Er-Doped Al2O3 Nanolaminate Films by Y2O3 Cladding Layers Using Atomic Layer Deposition

Amorphous Al2O3-Y2O3:Er nanolaminate films are fabricated on silicon by atomic layer deposition, and similar to 1530 nm electroluminescence (EL) is obtained from the metal-oxide-semiconductor light-emitting devices based on these nanofilms. The introduction of Y2O3 into Al2O3 reduces the electric field for Er excitation and the EL performance is significantly enhanced, while the electron injection of devices and the radiative recombination of doped Er3+ ions are not impacted. The 0.2 nm Y2O3 cladding layers for Er3+ ions increase the external quantum efficiency from similar to 3% to 8.7% and the power efficiency is increased by nearly one order of magnitude to 0.12%. The EL is ascribed to the impact excitation of Er3+ ions by hot electrons, which stem from Poole-Frenkel conduction mechanism under sufficient voltage within the Al2O3-Y2O3 matrix.

Automated summary

Amorphous Al2O3-Y2O3:Er nanolaminate films are prepared on silicon using atomic layer deposition, and the resulting metal-oxide-semiconductor light-emitting devices exhibit similar electroluminescence (EL) at 1530 nm. The addition of Y2O3 in Al2O3 reduces the electric field for Er excitation and significantly enhances the EL performance without affecting electron injection and radiative recombination of doped Er3+ ions. The 0.2 nm Y2O3 cladding layers for Er3+ ions increase the external quantum efficiency from around 3% to 8.7% and the power efficiency by nearly one order of magnitude to 0.12%. The EL is attributed to impact excitation of Er3+ ions by hot electrons, originated from Poole-Frenkel conduction mechanism within the Al2O3-Y2O3 matrix.