Related references
Note: Only part of the references are listed.Graphene nano-sieves by femtosecond laser irradiation
S. Katsiaounis et al.
NANOTECHNOLOGY (2023)
Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene
Nadezhda A. Nebogatikova et al.
MATERIALS (2023)
Graphene as a Transparent Conductive Electrode in GaN-Based LEDs
Hehe Zhang et al.
MATERIALS (2022)
MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
Kazimieras Badokas et al.
NANOMATERIALS (2022)
Femtosecond Laser-Based Micromachining of Rotational-Symmetric Sapphire Workpieces
Stefan Kefer et al.
MATERIALS (2022)
Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes
Penghao Tang et al.
CRYSTALS (2022)
Remote epitaxy of GaN via graphene on GaN/sapphire templates
Kazimieras Badokas et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Integration of bulk materials with two-dimensional materials for physical coupling and applications
Sang-Hoon Bae et al.
NATURE MATERIALS (2019)
Femtosecond laser patterning of graphene electrodes for thin-film transistors
Maren Kasischke et al.
APPLIED SURFACE SCIENCE (2019)
Raman study of the substrate influence on graphene synthesis using a solid carbon source via rapid thermal annealing
Yannick Bleu et al.
JOURNAL OF RAMAN SPECTROSCOPY (2019)
Improvement of luminescence properties of InN by optimization of multi-step deposition on sapphire
J. Mickevicius et al.
THIN SOLID FILMS (2019)
Influence of Temperature-Dependent Substrate Decomposition on Graphene for Separable GaN Growth
Jeong-Hwan Park et al.
ADVANCED MATERIALS INTERFACES (2019)
Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices
J. Mickevicius et al.
OPTICAL MATERIALS (2018)
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
Yunjo Kim et al.
NATURE (2017)
Evolution of threading dislocations in GaN epitaxial laterally overgrown on GaN templates using self-organized graphene as a nano-mask
Yu Xu et al.
APPLIED PHYSICS LETTERS (2017)
Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells
M. Dmukauskas et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
GaN-based light-emitting diodes on various substrates: a critical review
Guoqiang Li et al.
REPORTS ON PROGRESS IN PHYSICS (2016)
On the increased efficiency in InGaN-based multiple quantum wells emitting at 530-590 nm with AlGaN interlayers
D. D. Koleske et al.
JOURNAL OF CRYSTAL GROWTH (2015)
The impact of graphene properties on GaN and AlN nucleation
Zakaria Y. Al Balushi et al.
SURFACE SCIENCE (2015)
Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC
Andras Kovacs et al.
ADVANCED MATERIALS INTERFACES (2015)
Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer
Yazeed Alaskar et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
Chunhua Du et al.
APPLIED PHYSICS LETTERS (2014)
Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN
A. Arnatkeviciute et al.
JOURNAL OF ELECTRONIC MATERIALS (2014)
Raman spectroscopy as a versatile tool for studying the properties of graphene
Andrea C. Ferrari et al.
NATURE NANOTECHNOLOGY (2013)
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
A. Pirkle et al.
APPLIED PHYSICS LETTERS (2011)
Wettability and Surface Free Energy of Graphene Films
Shiren Wang et al.
LANGMUIR (2009)
Surface step morphologies of GaN films grown on vicinal sapphire (0001) substrates by rf-MBE
X. Q. Shen et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Substrates for gallium nitride epitaxy
L Liu et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2002)