Journal
NANOMATERIALS
Volume 13, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/nano13050882
Keywords
phototransistors; heterostructure; charge trapping; neuromorphic devices; photogating
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Unlike the photoelectric effect, the photogating effect enables the detection of sub-bandgap rays. This effect is caused by trapped photo-induced charges that alter the potential energy at the semiconductor/dielectric interface, resulting in a shift in the threshold voltage. The photogating effect separates the drain current in dark and bright exposures.
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect.
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