Optically Active Telecom Defects in MoTe2 Fewlayers at Room Temperature

The optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe2) show the potential for quantum light emission at optical fiber communication bands. However, the observation of defect-related light emission is still limited to cryogenic temperatures. In this work, we demonstrate the deep defect states in MoTe2 fewlayers produced via a standard van der Waal material transfer method with a heating process, which enables light emission in the telecommunication O-band. The optical measurements show evidence of localized excitons and strong interaction among defects. Furthermore, the optical emission of defects depends on the thickness of the host materials. Our findings offer a new route for tailoring the optical properties of two-dimensional materials in optoelectronic applications.

Automated summary

This work demonstrates the generation of deep defect states in MoTe2 fewlayers via a heating process, enabling light emission in the telecommunication O-band for quantum light emission. Optical measurements reveal localized excitons and strong interaction among defects. Furthermore, the optical emission of defects depends on the thickness of the host materials. These findings offer a new route for tailoring the optical properties of two-dimensional materials in optoelectronic applications.