☆ 4.7 Article

Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy

NANOMATERIALS (2023)

Related references

Note: Only part of the references are listed.

Article Materials Science, Multidisciplinary

HVPE Growth and Characterization of Thick κ-Ga2O3 layers on GaN/Sapphire Templates

S. I. Stepanov et al.

Summary: This study successfully grew Ga2O3 layers with thickness ranging from 10 to 86 μm using halide vapor phase epitaxy (HVPE) on GaN(0001)/sapphire templates. The grown layers were pure (001)-oriented kappa-Ga2O3 phase without admixture of other phases. The best crystal quality was observed in 13-20 μm thick kappa-Ga2O3 layers, while an increase in thickness led to deterioration indicated by broadening of rocking curves. Electrical measurements showed that the grown layers were n-type with decreasing concentration of shallow donors and deep level transient spectroscopy (DLTS) revealed the presence of deep traps with varying energy levels.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2023)

Add to Collection

Article Chemistry, Physical

Two-dimensional hole gas formation at the kappa-Ga2O3/AlN heterojunction interface

A. Y. Polyakov et al.

Summary: Typically, semiconducting oxides and nitrides exhibit conductivity type asymmetries. In this study, p-type conductivity was observed at the kappa-Ga2O3/AlN interface. Lightly Sn-doped-Ga2O3 films were deposited on AlN/Si templates using HVPE method. Measurements on Schottky diodes and Ohmic contacts showed p-type-like behavior, and EBIC images suggested the formation of a p-type layer near the Ga2O3/AlN interface. Modelling indicated the formation of a two-dimensional hole layer at this interface, depending on the doping level and thickness of the kappa-Ga2O3.

JOURNAL OF ALLOYS AND COMPOUNDS (2023)

Add to Collection

Article Physics, Applied

Plan-view TEM observation of a single-domain κ-Ga2O3 thin film grown on ε-GaFeO3 substrate using GaCl3 precursor by mist chemical vapor deposition

Hiroyuki Nishinaka et al.

Summary: In this study, we have demonstrated the growth of a single-domain kappa-Ga2O3 thin film on epsilon-GaFeO3, which exhibited good coherence and a unique surface morphology.

JAPANESE JOURNAL OF APPLIED PHYSICS (2022)

Add to Collection

Article Physics, Multidisciplinary

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Alexander Azarov et al.

Summary: In this study, the phenomenon of polymorphism in gallium oxide is investigated. It is found that the amorphization can be significantly suppressed by the phase transition, leading to the fabrication of a highly oriented single-phase film. A novel mode of lateral polymorphic regrowth, not previously observed in solids, is also discovered. These findings open up new directions for research on polymorphs in Ga2O3 and potentially in other materials.

PHYSICAL REVIEW LETTERS (2022)

Add to Collection

Article Physics, Applied

Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers

Alexander Polyakov et al.

Summary: This study reports on the growth and electrical properties of alpha-Ga2O3 films grown on alpha-Cr2O3 buffers using halide vapor phase epitaxy. The experimental results showed p-type conductivity of the buffers and low donor ionization energies in Sn-doped alpha-Ga2O3 films prepared on these buffers.

JOURNAL OF APPLIED PHYSICS (2022)

Add to Collection

Review Materials Science, Coatings & Films

Deep level defect states in β-, a-, and e-Ga2O3 crystals and films: Impact on device performance

Alexander Y. Polyakov et al.

Summary: This paper reviews the reported trap states in the bandgaps of different polymorphs of the emerging ultrawide bandgap semiconductor Ga2O3. The crystalline defects adversely affect the material properties critical to device operation and lead to degraded device operating speed characterized by long recovery transients. More research is needed to understand the microscopic nature of defects in Ga2O3.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2022)

Add to Collection

Article Nanoscience & Nanotechnology

Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates

A. Y. Polyakov et al.

Summary: Thick films (23 μm) of kappa-Ga2O3 were successfully grown on GaN/sapphire templates using Halide Vapor Phase Epitaxy (HVPE). The films exhibited good crystalline quality and surface morphology. They possessed specific properties such as a wide absorption band and deep-level traps.

APL MATERIALS (2022)

Add to Collection

Article Materials Science, Multidisciplinary

Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic Κ-Ga2O3 epilayers

Carmine Borelli et al.

Summary: The electrical and optical properties of high-resistivity kappa-Ga2O3 epitaxial films are studied, and their performance as solar-blind photodetectors is investigated. The photodetectors exhibit a high rejection ratio, reproducible on-off switching times, and significant photo-gain. The material shows non-critical growth conditions, intrinsic spectral selectivity, and good UV-detection performance, making it suitable for solar-blind ultraviolet photodetectors.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2022)

Add to Collection

Review Materials Science, Multidisciplinary

A strategic review on gallium oxide based power electronics: Recent progress and future prospects

Shivani et al.

Summary: Researchers are increasingly studying next-generation wide bandgap semiconductors such as SiC, GaN, and Ga2O3. Ga2O3, with its ultra-wide bandgap and high breakdown field, shows potential as a replacement. However, current Ga2O3 power diodes have issues with switching losses and speed. This review analyzes the progress in Ga2O3 power devices, discusses challenges, and explores future prospects.

MATERIALS TODAY COMMUNICATIONS (2022)

Add to Collection

Article Nanoscience & Nanotechnology

Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications

Mahitosh Biswas et al.

Summary: The translation elaborates on the properties and growth of gallium oxide (Ga2O3) and its metastable phases, and discusses their doping and electronic properties. The importance of these phases in power electronics and ultraviolet photodetectors is emphasized.

APL MATERIALS (2022)

Add to Collection

Article Physics, Applied

Structural stability of β-Ga2O3 under ion irradiation

Alexander Petkov et al.

Summary: In this study, an in situ irradiation experiment using a transmission electron microscope revealed that the structure of β-Ga2O3 remains intact with the exception of anisotropic lattice distortions and the appearance of additional weak reflections above a certain level of irradiation. The origin of the extra reflections was discussed.

APPLIED PHYSICS LETTERS (2022)

Add to Collection

Article Materials Science, Multidisciplinary

Electrical and Structural Properties of Two-Inch Diameter (0001) α-Ga2O3 Films Doped with Sn and Grown by Halide Epitaxy

V. I. Nikolaev et al.

Summary: Two-inch diameter alpha-Ga2O3 films with a thickness of about 4 μm were successfully grown on basal plane sapphire using HVPE. The films were characterized using various techniques, revealing low dislocation densities, smooth surface, and varied sheet resistivity. Furthermore, the donor concentration and deep trap levels were also observed.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2022)

Add to Collection

Article Chemistry, Multidisciplinary

ε-Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators

Zimin Chen et al.

Summary: The explosion of mobile data from the internet of things (IoT) is driving the development of 5G technology, which requires high-performance filters. This study explores the potential of epsilon-Ga2O3, a semiconductor with a higher piezoelectric constant than AlN, for use in piezoelectric devices. The results demonstrate the suitability of epsilon-Ga2O3 for application in 5G radio frequency (RF) front-ends.

ADVANCED SCIENCE (2022)

Add to Collection

Article Physics, Applied

Formation of γ-Ga2O3 by ion implantation: Polymorphic phase transformation of β-Ga2O3

J. Garcia-Fernandez et al.

Summary: This study investigates the phase transformation and crystal structure of β-Ga2O3 samples induced by ion implantation using electron diffraction and various microscopy techniques. It reveals that the monoclinic β-phase transforms into the cubic γ-phase, contrary to previous reports. The transformation is found to be a general phenomenon due to strain accumulation and energetic preference.

APPLIED PHYSICS LETTERS (2022)

Add to Collection

Review Physics, Applied

Deep-level defects in gallium oxide

Zhengpeng Wang et al.

Summary: Gallium oxide (Ga2O3) as an ultrawide bandgap semiconductor has excellent physical properties and shows promise in power electronics and deep-ultraviolet optoelectronics applications. However, understanding the defect chemistry in Ga2O3, particularly acceptor dopants and carrier compensation effects, remains a challenge. This review summarizes recent advances in investigating defect properties, carrier dynamics, and optical transitions in Ga2O3, shedding light on the microstructures and origins of defects in various forms of Ga2O3.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)

Add to Collection

Article Physics, Applied

Experimental estimation of electron-hole pair creation energy in β-Ga2O3

E. B. Yakimov et al.

Summary: The applicability of using Electron Beam Induced Current (EBIC) measurements on Schottky barriers to obtain the mean electron-hole pair creation energy in beta-Ga2O3 has been demonstrated. When combined with Monte Carlo simulation, this approach yielded consistent data sets for Si, GaN, and 4H-SiC, in agreement with empirical expressions proposed for various semiconductors. The method was then successfully applied to beta-Ga2O3, where complications related to hole trapping in the material were carefully addressed, resulting in a mean electron-hole pair energy formation of 15.6eV, in reasonable agreement with predicted values.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Article Nanoscience & Nanotechnology

Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy

Jinho Bae et al.

Summary: A compact self-powered solar-blind UV-C photodiode was demonstrated using an ultra-wide bandgap alpha-Ga2O3 thin film as a wavelength-selective absorber layer, eliminating the need for low-performance and bulky solar blind UV bandpass filters. The photodetector exhibited excellent responsivity, fast rise/decay characteristics, and solar blindness, making it a promising candidate for the development of a compact and energy-independent next-generation UV-C photodetector.

APL MATERIALS (2021)

Add to Collection

Article Physics, Applied

Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire

J. P. McCandless et al.

Summary: The study reveals that an aluminum oxide cap grown by atomic layer deposition can maintain the stability of alpha-(Al,Ga)2O3 under high-temperature conditions, while uncapped alpha-Ga2O3 undergoes a structural phase transition at high temperatures. Additionally, uncapped alpha-(Al,Ga)2O3 with 46% and 100% Al content also remains stable at high temperatures.

APPLIED PHYSICS LETTERS (2021)

Add to Collection

Review Crystallography

Study of Wide-Gap Semiconductors Using Electron-Beam Induced Current Method

E. B. Yakimov

Summary: The studies on wide-gap semiconductor materials using EBIC method were reviewed, analyzing the main methods for measuring the diffusion length of nonequilibrium carriers and discussing the reliability of obtained values. The possibilities of EBIC for detecting dislocations, studying their recombination activity, achieving high lateral resolution, and the influence of irradiation on electrical and optical properties were demonstrated. The results of studying recombination-enhanced dislocation glide under electron-beam irradiation in GaN and 4H-SiC were presented.

CRYSTALLOGRAPHY REPORTS (2021)

Add to Collection

Article Physics, Applied

Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy

M. Kneiss et al.

Summary: Novel devices based on orthorhombic kappa-Ga2O3 show potential for solar blind infrared detection or high-electron mobility transistors. Current transport parallel to the growth direction was achieved through different contact layers, with significant current flow through the ohmic contacts. Schottky barrier diodes and p n-heterojunctions exhibited rectification ratios of up to seven orders of magnitude.

JOURNAL OF APPLIED PHYSICS (2021)

Add to Collection

Article Materials Science, Multidisciplinary

In situ TEM study of κ → β and κ → γ phase transformations in Ga2O3

I. Cora et al.

ACTA MATERIALIA (2020)

Add to Collection

Article Physics, Applied

Structural transition and recovery of Ge implanted β-Ga2O3

Elaf A. Anber et al.

APPLIED PHYSICS LETTERS (2020)

Add to Collection

Article Physics, Applied

Control of phase formation of (AlxGa1-x)2O3 thin films on c-plane Al2O3

Anna Hassa et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

Add to Collection

Article Materials Science, Multidisciplinary

HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates

V. Nikolaev et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Add to Collection

Article Materials Science, Multidisciplinary

Editors' Choice-Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy

A. Y. Polyakov et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2020)

Add to Collection

Article Nanoscience & Nanotechnology

Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Y. Oshima et al.

APL MATERIALS (2019)

Add to Collection

Article Nanoscience & Nanotechnology

Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3

M. E. Ingebrigtsen et al.

APL MATERIALS (2019)

Add to Collection

Article Nanoscience & Nanotechnology

Si and Sn dopirig of ε-Ga2O3 layers

A. Parisini et al.

APL MATERIALS (2019)

Add to Collection

Article Nanoscience & Nanotechnology

Deep acceptors and their diffusion in Ga2O3

Hartwin Peelaers et al.

APL MATERIALS (2019)

Add to Collection

Article Nanoscience & Nanotechnology

Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire

A. Y. Polyakov et al.

APL MATERIALS (2019)

Add to Collection

Article Physics, Applied

Energetics and electronic structure of native point defects in α-Ga2O3

Takuma Kobayashi et al.

APPLIED PHYSICS EXPRESS (2019)

Add to Collection

Article Physics, Applied

Materials issues and devices of α- and β-Ga2O3

Elaheh Ahmadi et al.

JOURNAL OF APPLIED PHYSICS (2019)

Add to Collection

Article Crystallography

Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy

G. Lukin et al.

JOURNAL OF CRYSTAL GROWTH (2019)

Add to Collection

Review Materials Science, Multidisciplinary

Radiation damage effects in Ga2O3 materials and devices

Jihyun Kim et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Add to Collection

Review Materials Science, Multidisciplinary

Gallium oxide solar-blind ultraviolet photodetectors: a review

Jingjing Xu et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Add to Collection

Article Physics, Applied

Epitaxial engineering of polar ε-Ga2O3 for tunable two-dimensional electron gas at the heterointerface

Sung Beom Cho et al.

APPLIED PHYSICS LETTERS (2018)

Add to Collection

Article Physics, Applied

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Kentaro Kaneko et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2018)

Add to Collection

Article Physics, Applied

Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current

E. B. Yakimov et al.

JOURNAL OF APPLIED PHYSICS (2018)

Add to Collection

Article Nanoscience & Nanotechnology

Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

A. Y. Polyakov et al.

APL MATERIALS (2018)

Add to Collection

Article Physics, Applied

Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films

Hiroyuki Nishinaka et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2018)

Add to Collection

Article Physics, Applied

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

S. J. Pearton et al.

JOURNAL OF APPLIED PHYSICS (2018)

Add to Collection

Review Nanoscience & Nanotechnology

Group-III Sesquioxides: Growth, Physical Properties and Devices

Holger von Wenckstern

ADVANCED ELECTRONIC MATERIALS (2017)

Add to Collection

Article Materials Science, Multidisciplinary

Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β-Ga2O3

Peter Deak et al.

PHYSICAL REVIEW B (2017)

Add to Collection

Article Physics, Applied

Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3 buffer layers

Riena Jinno et al.

APPLIED PHYSICS EXPRESS (2016)

Add to Collection

Article Physics, Applied

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

Z. Zhang et al.

APPLIED PHYSICS LETTERS (2016)

Add to Collection

Article Chemistry, Inorganic & Nuclear

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

Francesco Mezzadri et al.

INORGANIC CHEMISTRY (2016)

Add to Collection

Article Chemistry, Physical

Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

A. Y. Polyakov et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2016)

Add to Collection

Article Chemistry, Physical

What is the real value of diffusion length in GaN?

E. B. Yakimov

JOURNAL OF ALLOYS AND COMPOUNDS (2015)

Add to Collection

Article Engineering, Electrical & Electronic

Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

Alexander Y. Polyakov et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)

Add to Collection

© Peeref 2019-2024. All rights reserved.