4.6 Review

Ferroelectric field effect transistors for electronics and optoelectronics

Related references

Note: Only part of the references are listed.
Article Chemistry, Multidisciplinary

Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse

Yurong Jiang et al.

Summary: In this study, a reconfigurable two-dimensional MoS2 transistor with an asymmetric ferroelectric gate is designed, demonstrating high memory and logic capability. The device exhibits excellent nonvolatile characteristics, robust electric and optic cycling, and synaptic behavior in response to different light pulses, showcasing its potential for Fe-FETs in logic processing and nonvolatile memory applications.

ACS NANO (2022)

Article Multidisciplinary Sciences

Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

Shuaiqin Wu et al.

Summary: This study presents a homojunction photodetector based on black phosphorus, which exhibits ultra-sensitive polarization photoresponse. By modulating the ferroelectric field, black phosphorus shows enhanced photothermalelectric current in a specific direction. Furthermore, the PN junction can promote the photothermalelectric current and accelerate carrier separation. The black phosphorus photodetector demonstrates ultrahigh polarization ratio, large photoresponsivity, and high detectivity in the near-infrared.

NATURE COMMUNICATIONS (2022)

Article Nanoscience & Nanotechnology

A Van Der Waals Photo-Ferroelectric Synapse

Yao Cai et al.

Summary: This study reports the design and experimental demonstration of a van der Waals (vdW) photo-ferroelectric synapse, which extracts synaptic memory by reading photocurrent and can be written or edited by electrical pulses. The results show that the photo-ferroelectric synapse has good performance and can be used for classic training and inference.

ADVANCED ELECTRONIC MATERIALS (2022)

Article Physics, Applied

Band alignment engineering of a Ruddlesden-Popper perovskite-based heterostructure constructed using Cs2SnI2Cl2 and α-In2Se3: The effects of ferroelectric polarization switching and electric fields

Cheng-Sheng Liao et al.

Summary: This study investigates ferroelectric polarization and electric field control of band alignments in the alpha-In2Se3/Cs2SnI2Cl2 heterostructure using first-principle calculations. The results show that band alignment can be changed from type-II to type-III by switching the ferroelectric polarization direction in the alpha-In2Se3 layer. Additionally, applying an external electric field can modulate the band structure and induce band alignment transition in the heterostructure.

APPLIED PHYSICS LETTERS (2021)

Article Chemistry, Multidisciplinary

Multiresponsive Nonvolatile Memories Based on Optically Switchable Ferroelectric Organic Field-Effect Transistors

Marco Carroli et al.

Summary: Organic transistors are crucial for flexible and wearable logic applications, and the pursuit of multiresponsivity is important for enabling sophisticated operations and functions in organic electronics. The first multiresponsive organic device based on a photochromic-ferroelectric organic field-effect transistor has been reported, capable of operating as nonvolatile memory with 11 bit storage capacity in a single device. This proof of concept paves the way for enhanced functional complexity in optoelectronics through the integration of multiple components in a single device.

ADVANCED MATERIALS (2021)

Article Multidisciplinary Sciences

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Xiaowei Wang et al.

Summary: The study demonstrates a long-retention ferroelectric transistor memory cell built from van der Waals single crystals, showing high endurance, rapid operation speed, and promising directions for improving ferroelectric memory performance and reliability in the future.

NATURE COMMUNICATIONS (2021)

Review Materials Science, Multidisciplinary

Recent Progress in Optical Control of Ferroelectric Polarization

Jiaxing Guo et al.

Summary: This review explores the phenomena and mechanisms of optical control over ferroelectric polarization and associated domain evolution, aiming to overcome the limitations of traditional polarization switching methods. All-optical fabrication of 3D nonlinear photonic crystals based on femtosecond laser-induced ferroelectric domain inversion is showcased. The review concludes with a brief summary of related branches and discusses the challenges and potential directions of this emerging field.

ADVANCED OPTICAL MATERIALS (2021)

Article Chemistry, Physical

A robust neuromorphic vision sensor with optical control of ferroelectric switching

Jianyu Du et al.

Summary: The study introduces a neuromorphic vision sensor with an optoelectronic transistor structure that exhibits tunable synaptic behavior and multi-level optical memory properties, leading to significantly improved image recognition rate through neuromorphic pre-processing.

NANO ENERGY (2021)

Article Multidisciplinary Sciences

Ferroelectric-tuned van der Waals heterojunction with band alignment evolution

Yan Chen et al.

Summary: Band alignment transition of GeSe/MoS2 heterojunction is demonstrated in a ferroelectric-tuned van der Waals heterojunction device with high performance, showing a high-performance polarization-sensitive photodetector and enhanced dichroism ratios in a broad spectrum from visible to near-infrared.

NATURE COMMUNICATIONS (2021)

Article Engineering, Electrical & Electronic

Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

Ava Jiang Tan et al.

Summary: Appropriate engineering of the interfacial layer can substantially improve the performance and reliability of FeFET devices.

IEEE ELECTRON DEVICE LETTERS (2021)

Article Polymer Science

Ferroelectric switching in spin-coated nylons 11 and 12

Ayumi Yanaka et al.

JOURNAL OF APPLIED POLYMER SCIENCE (2020)

Article Physics, Condensed Matter

Origin of robust out-of-plane ferroelectricity in d1T-MoS2 monolayer

Ji-Hae Choi et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2020)

Article Chemistry, Multidisciplinary

MoTe2 p-n Homojunctions Defined by Ferroelectric Polarization

Guangjian Wu et al.

ADVANCED MATERIALS (2020)

Article Engineering, Electrical & Electronic

Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs With MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs

Shen-Yang Lee et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Article Polymer Science

Synthesis and Solution Processing of Nylon-5 Ferroelectric Thin Films: The Renaissance of Odd-Nylons?

Philipp von Tiedemann et al.

MACROMOLECULAR CHEMISTRY AND PHYSICS (2020)

Article Multidisciplinary Sciences

Ultrasensitive negative capacitance phototransistors

Luqi Tu et al.

NATURE COMMUNICATIONS (2020)

Article Multidisciplinary Sciences

Is negative capacitance FET a steep-slope logic switch?

Wei Cao et al.

NATURE COMMUNICATIONS (2020)

Article Chemistry, Multidisciplinary

KxWO Is a Novel Ferroelectric Nanomaterial for Application as a Room Temperature Acetone Sensor

Michael E. Johnson et al.

NANOMATERIALS (2020)

Article Multidisciplinary Sciences

A flexible artificial intrinsic-synaptic tactile sensory organ

Yu Rim Lee et al.

NATURE COMMUNICATIONS (2020)

Article Chemistry, Multidisciplinary

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Yuekun Yang et al.

NANO LETTERS (2020)

Article Multidisciplinary Sciences

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Suraj S. Cheema et al.

NATURE (2020)

Article Chemistry, Multidisciplinary

Designing Multi-Level Resistance States in Graphene Ferroelectric Transistors

Morteza Hassanpour Amiri et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

Article Physics, Applied

Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

Justin R. Rodriguez et al.

APPLIED PHYSICS LETTERS (2020)

Article Chemistry, Multidisciplinary

Highly Sensitive InSb Nanosheets Infrared Photodetector Passivated by Ferroelectric Polymer

Shukui Zhang et al.

ADVANCED FUNCTIONAL MATERIALS (2020)

Article Multidisciplinary Sciences

Scale-free ferroelectricity induced by flat phonon bands in HfO2

Hyun-Jae Lee et al.

SCIENCE (2020)

Review Physics, Applied

Analog architectures for neural network acceleration based on non-volatile memory

T. Patrick Xiao et al.

APPLIED PHYSICS REVIEWS (2020)

Editorial Material Engineering, Electrical & Electronic

What's next for negative capacitance electronics?

Michael Hoffmann et al.

NATURE ELECTRONICS (2020)

Article Materials Science, Multidisciplinary

Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator

Saleem Anwar et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Article Engineering, Electrical & Electronic

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Guangjian Wu et al.

NATURE ELECTRONICS (2020)

Article Multidisciplinary Sciences

Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit

Shuoguo Yuan et al.

NATURE COMMUNICATIONS (2019)

Article Nanoscience & Nanotechnology

Low-Voltage Organic Transistor Memory Fiber with a Nanograined Organic Ferroelectric Film

Minji Kang et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Article Chemistry, Multidisciplinary

Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Fei Xue et al.

ADVANCED MATERIALS (2019)

Article Engineering, Electrical & Electronic

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

Daewoong Kwon et al.

IEEE ELECTRON DEVICE LETTERS (2019)

Article Chemistry, Multidisciplinary

Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 nm to 10 mu m

Xudong Wang et al.

ADVANCED SCIENCE (2019)

Article Multidisciplinary Sciences

Solution-processed transparent ferroelectric nylon thin films

Saleem Anwar et al.

SCIENCE ADVANCES (2019)

Article Physics, Applied

Ferroelectric properties of gradient doped Y2O3:HfO2 thin films grown by pulsed laser deposition

Qianqian Shao et al.

APPLIED PHYSICS LETTERS (2019)

Article Chemistry, Multidisciplinary

Two-Dimensional Organic-Inorganic Perovskite Ferroelectric Semiconductors with Fluorinated Aromatic Spacers

Ping-Ping Shi et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2019)

Article Nanoscience & Nanotechnology

A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

Bobo Tian et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Review Physics, Condensed Matter

Atomically thin α-In2Se3: an emergent two-dimensional room temperature ferroelectric semiconductor

Yue Li et al.

JOURNAL OF SEMICONDUCTORS (2019)

Article Materials Science, Multidisciplinary

Flexible ultra-short channel organic ferroelectric non-volatile memory transistors

Enlong Li et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Article Nanoscience & Nanotechnology

Graphene-ferroelectric transistors as complementary synapses for supervised learning in spiking neural network

Yangyang Chen et al.

NPJ 2D MATERIALS AND APPLICATIONS (2019)

Article Nanoscience & Nanotechnology

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Mengwei Si et al.

NATURE NANOTECHNOLOGY (2018)

Article Chemistry, Inorganic & Nuclear

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

Uwe Schroeder et al.

INORGANIC CHEMISTRY (2018)

Article Engineering, Electrical & Electronic

Neuro-Inspired Computing With Emerging Nonvolatile Memory

Shimeng Yu

PROCEEDINGS OF THE IEEE (2018)

Article Engineering, Electrical & Electronic

Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor

Kyungmin Jang et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)

Article Engineering, Electrical & Electronic

Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics

Sourabh Khandelwal et al.

IEEE ELECTRON DEVICE LETTERS (2017)

Article Engineering, Electrical & Electronic

Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V

Eunah Ko et al.

IEEE ELECTRON DEVICE LETTERS (2017)

Article Chemistry, Multidisciplinary

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

Felicia A. McGuire et al.

NANO LETTERS (2017)

Article Chemistry, Multidisciplinary

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

Yu Zhou et al.

NANO LETTERS (2017)

Article Multidisciplinary Sciences

Learning through ferroelectric domain dynamics in solid-state synapses

Soeren Boyn et al.

NATURE COMMUNICATIONS (2017)

Article Multidisciplinary Sciences

Ferroelectric polarization induces electronic nonlinearity in ion-doped conducting polymers

Simone Fabiano et al.

SCIENCE ADVANCES (2017)

Article Nanoscience & Nanotechnology

Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating

Xudong Wang et al.

NPJ 2D MATERIALS AND APPLICATIONS (2017)

Article Materials Science, Multidisciplinary

Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels

Xudong Wang et al.

2D MATERIALS (2017)

Article Nanoscience & Nanotechnology

Ferroelectric Zinc Oxide Nanowire Embedded Flexible Sensor for Motion and Temperature Sensing

Sung-Ho Shin et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Nanoscience & Nanotechnology

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

Halid Mulaosmanovic et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Nanoscience & Nanotechnology

Enhanced Piezoelectric Energy Harvesting Performance of Flexible PVDF-TrFE Bilayer Films with Graphene Oxide

Venkateswarlu Bhavanasi et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Nanoscience & Nanotechnology

Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer

Yan Chen et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Chemistry, Multidisciplinary

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

Michael Hoffmann et al.

ADVANCED FUNCTIONAL MATERIALS (2016)

Article Chemistry, Multidisciplinary

High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors

Dingshan Zheng et al.

ADVANCED FUNCTIONAL MATERIALS (2016)

Article Engineering, Electrical & Electronic

Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Asif Islam Khan et al.

IEEE ELECTRON DEVICE LETTERS (2016)

Article Engineering, Electrical & Electronic

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

Jaesung Jo et al.

IEEE ELECTRON DEVICE LETTERS (2016)

Article Engineering, Electrical & Electronic

Device Modelling for Bendable Piezoelectric FET-Based Touch Sensing System

Shoubhik Gupta et al.

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS (2016)

Article Engineering, Electrical & Electronic

Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs

Zhi Cheng Yuan et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)

Article Physics, Multidisciplinary

High-performance black phosphorus top-gate ferroelectric transistor for nonvolatile memory applications

Young Tack Lee et al.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2016)

Article Nanoscience & Nanotechnology

Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer

Guangjian Wu et al.

NANOTECHNOLOGY (2016)

Article Engineering, Electrical & Electronic

Flexible graphene field effect transistor with ferroelectric polymer gate

Xudong Wang et al.

OPTICAL AND QUANTUM ELECTRONICS (2016)

Article Chemistry, Multidisciplinary

Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector

Hai Huang et al.

RSC ADVANCES (2016)

Article Neurosciences

Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses

Stefano Ambrogio et al.

FRONTIERS IN NEUROSCIENCE (2016)

Article Chemistry, Multidisciplinary

Optoelectrical Molybdenum Disulfide (MoS2)-Ferroelectric Memories

Alexey Lipatov et al.

ACS NANO (2015)

Article Chemistry, Multidisciplinary

Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

Xudong Wang et al.

ADVANCED MATERIALS (2015)

Article Chemistry, Multidisciplinary

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

Min Hyuk Park et al.

ADVANCED MATERIALS (2015)

Article Engineering, Electrical & Electronic

A Novel Four-Terminal Ferroelectric Tunnel FET for Quasi-Ideal Switch

Mirgender Kumar et al.

IEEE TRANSACTIONS ON NANOTECHNOLOGY (2015)

Article Physics, Multidisciplinary

High-performance a MoS2 nanosheet-based nonvolatile memory transistor with a ferroelectric polymer and graphene source-drain electrode

Young Tack Lee et al.

JOURNAL OF THE KOREAN PHYSICAL SOCIETY (2015)

Article Chemistry, Multidisciplinary

CuInP2S6 Room Temperature Layered Ferroelectric

A. Belianinov et al.

NANO LETTERS (2015)

Article Nanoscience & Nanotechnology

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

Vinod K. Sangwan et al.

NATURE NANOTECHNOLOGY (2015)

Article Multidisciplinary Sciences

Controlling the on/off current ratio of ferroelectric field-effect transistors

Ilias Katsouras et al.

SCIENTIFIC REPORTS (2015)

Review Chemistry, Analytical

Nanoelectromechanical Switches for Low-Power Digital Computing

Alexis Peschot et al.

MICROMACHINES (2015)

Article Engineering, Chemical

Powder synthesis and properties of LiTaO3 ceramics

Tao Yang et al.

ADVANCED POWDER TECHNOLOGY (2014)

Article Engineering, Electrical & Electronic

Ferroelectric Artificial Synapses for Recognition of a Multishaded Image

Yukihiro Kaneko et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)

Article Chemistry, Multidisciplinary

Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature

Daniel J. R. Appleby et al.

NANO LETTERS (2014)

Article Multidisciplinary Sciences

Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics

Wenzhuo Wu et al.

NATURE (2014)

Article Nanoscience & Nanotechnology

Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

M. H. Lee et al.

AIP ADVANCES (2014)

Article Chemistry, Multidisciplinary

Logic Computation in Phase Change Materials by Threshold and Memory Switching

M. Cassinerio et al.

ADVANCED MATERIALS (2013)

Article Physics, Applied

Graphene-ferroelectric hybrid devices for multi-valued memory system

S. Jandhyala et al.

APPLIED PHYSICS LETTERS (2013)

Article Materials Science, Ceramics

Effect of PMN content on the phase structure and electrical properties of PMN-PZT ceramics

Li Wang et al.

CERAMICS INTERNATIONAL (2013)

Article Materials Science, Ceramics

Synthesis and characterizations of KNN ferroelectric ceramics near 50/50 MPB

P. Kumar et al.

CERAMICS INTERNATIONAL (2013)

Article Nanoscience & Nanotechnology

Flexible graphene-PZT ferroelectric nonvolatile memory

Wonho Lee et al.

NANOTECHNOLOGY (2013)

Article Nanoscience & Nanotechnology

Ferroelectric polymer-gated graphene memory with high speed conductivity modulation

Hyeon Jun Hwang et al.

NANOTECHNOLOGY (2013)

Article Nanoscience & Nanotechnology

Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack

Woojin Park et al.

NANOTECHNOLOGY (2013)

Article Multidisciplinary Sciences

Diisopropylammonium Bromide Is a High-Temperature Molecular Ferroelectric Crystal

Da-Wei Fu et al.

SCIENCE (2013)

Article Engineering, Electrical & Electronic

POSFET tactile sensing arrays using CMOS technology

R. S. Dahiya et al.

SENSORS AND ACTUATORS A-PHYSICAL (2013)

Article Chemistry, Multidisciplinary

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

Stefan Mueller et al.

ADVANCED FUNCTIONAL MATERIALS (2012)

Article Chemistry, Multidisciplinary

High-Performance Non-Volatile Organic Ferroelectric Memory on Banknotes

M. A. Khan et al.

ADVANCED MATERIALS (2012)

Article Physics, Applied

Origin of multiple memory states in organic ferroelectric field-effect transistors

Benjamin Kam et al.

APPLIED PHYSICS LETTERS (2012)

Article Engineering, Electrical & Electronic

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric HfO2

Johannes Mueller et al.

IEEE ELECTRON DEVICE LETTERS (2012)

Article Physics, Applied

Resistive switching in silicon suboxide films

Adnan Mehonic et al.

JOURNAL OF APPLIED PHYSICS (2012)

Article Chemistry, Multidisciplinary

Ferroelectricity in Simple Binary ZrO2 and HfO2

Johannes Mueller et al.

NANO LETTERS (2012)

Article Chemistry, Physical

A ferroelectric memristor

Andre Chanthbouala et al.

NATURE MATERIALS (2012)

Article Multidisciplinary Sciences

Above-room-temperature ferroelectricity and antiferroelectricity in benzimidazoles

Sachio Horiuchi et al.

NATURE COMMUNICATIONS (2012)

Article Chemistry, Multidisciplinary

Multilevel Information Storage in Ferroelectric Polymer Memories

Ashutosh K. Tripathi et al.

ADVANCED MATERIALS (2011)

Article Chemistry, Multidisciplinary

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

Feng Miao et al.

ADVANCED MATERIALS (2011)

Article Materials Science, Multidisciplinary

Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell

Sung-Min Yoon et al.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2011)

Article Physics, Applied

Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

Asif Islam Khan et al.

APPLIED PHYSICS LETTERS (2011)

Article Physics, Applied

Robust bi-stable memory operation in single-layer graphene ferroelectric memory

Emil B. Song et al.

APPLIED PHYSICS LETTERS (2011)

Article Physics, Applied

Ferroelectricity in hafnium oxide thin films

T. S. Boescke et al.

APPLIED PHYSICS LETTERS (2011)

Article Physics, Applied

Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

J. Mueller et al.

APPLIED PHYSICS LETTERS (2011)

Article Physics, Applied

Ferroelectricity in yttrium-doped hafnium oxide

J. Mueller et al.

JOURNAL OF APPLIED PHYSICS (2011)

Review Chemistry, Multidisciplinary

Organic Nonvolatile Memory Devices Based on Ferroelectricity

Ronald C. G. Naber et al.

ADVANCED MATERIALS (2010)

Article Chemistry, Multidisciplinary

Non-Kolmogorov-Avrami-Ishibashi Switching Dynamics in Nanoscale Ferroelectric Capacitors

Yunseok Kim et al.

NANO LETTERS (2010)

Article Nanoscience & Nanotechnology

Nonvolatile memory devices based on few-layer graphene films

Yong-Joo Doh et al.

NANOTECHNOLOGY (2010)

Article Multidisciplinary Sciences

Above-room-temperature ferroelectricity in a single-component molecular crystal

Sachio Horiuchi et al.

NATURE (2010)

Article Physics, Applied

Gate-controlled nonvolatile graphene-ferroelectric memory

Yi Zheng et al.

APPLIED PHYSICS LETTERS (2009)

Article Multidisciplinary Sciences

Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

Tsuyoshi Sekitani et al.

SCIENCE (2009)

Article Engineering, Electrical & Electronic

Plastic circuits and tags for 13.56 MHz radio-frequency communication

Kris Myny et al.

SOLID-STATE ELECTRONICS (2009)

Article Chemistry, Multidisciplinary

Use of negative capacitance to provide voltage amplification for low power nanoscale devices

Sayeef Salahuddin et al.

NANO LETTERS (2008)

Article Multidisciplinary Sciences

The missing memristor found

Dmitri B. Strukov et al.

NATURE (2008)

Article Chemistry, Physical

Organic non-volatile memories from ferroelectric phase-separated blends

Kamal Asadi et al.

NATURE MATERIALS (2008)

News Item Nanoscience & Nanotechnology

Nanoelectronics - Negative capacitance to the rescue?

Victor V. Zhirnov et al.

NATURE NANOTECHNOLOGY (2008)

Article Materials Science, Multidisciplinary

The microstructure and ferroelectric properties of (K0.5Na0.5)NbO3-LiNbO3 lead-free piezoelectric ceramics

Hongliang Du et al.

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2007)

Article Materials Science, Multidisciplinary

Properties of ferroelectric Pb(ZrTi)O3 thin films on ZnO/Al2O3 (0001) epilayers

DY Chen et al.

THIN SOLID FILMS (2005)

Article Physics, Applied

Low-voltage polymer field-effect transistors for nonvolatile memories

RCG Naber et al.

APPLIED PHYSICS LETTERS (2005)

Article Physics, Applied

Critical thickness of ultrathin ferroelectric BaTiO3 filMS -: art. no. 102907

YS Kim et al.

APPLIED PHYSICS LETTERS (2005)

Article Chemistry, Physical

High-performance solution-processed polymer ferroelectric field-effect transistors

RCG Naber et al.

NATURE MATERIALS (2005)

Article Materials Science, Ceramics

Piezoelectric/electrostrictive multimaterial PMN-PT monomorph actuators

A Hall et al.

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY (2005)

Review Materials Science, Multidisciplinary

Pulsed laser deposition of lead-zirconate-titanate thin films and multilayered heterostructures

TJ Zhu et al.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2005)

Article Materials Science, Multidisciplinary

(Na0.5K0.5)NbO3-LiTaO3 lead-free piezoelectric ceramics

YP Guo et al.

MATERIALS LETTERS (2005)

Article Chemistry, Multidisciplinary

All-organic permanent memory transistor using an amorphous, spin-cast ferroelectric-like gate insulator

R Schroeder et al.

ADVANCED MATERIALS (2004)

Article Multidisciplinary Sciences

Enhancement of ferroelectricity in strained BaTiO3 thin films

KJ Choi et al.

SCIENCE (2004)

Article Engineering, Electrical & Electronic

Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

S Sakai et al.

IEEE ELECTRON DEVICE LETTERS (2004)

Article Engineering, Electrical & Electronic

Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

TP Ma et al.

IEEE ELECTRON DEVICE LETTERS (2002)

Article Engineering, Electrical & Electronic

Hydrogen-sensitive amorphous ferroelectric thin film capacitive devices

W Zhu et al.

INTEGRATED FERROELECTRICS (2002)

Article Physics, Condensed Matter

Polarization and self-polarization in thin PbZr1-xTixO3 (PZT) films

VP Afanasjev et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2001)

Article Multidisciplinary Sciences

A ferroelectric liquid crystal conglomerate composed of racemic molecules

DM Walba et al.

SCIENCE (2000)

Article Materials Science, Multidisciplinary

Tetragonal-to-monoclinic phase transition in a ferroelectric perovskite:: The structure of PbZr0.52Ti0.48O3

B Noheda et al.

PHYSICAL REVIEW B (2000)