Improved Silicon Surface Passivation by ALD Al2O3/SiO2 Multilayers with In-Situ Plasma Treatments

Al2O3 is one of the most effective dielectric surface passivation layers for silicon solar cells, but recent studies indicate that there is still room for improvement. Instead of a single layer, multilayers of only a few nanometers thickness offer the possibility to tailor material properties on a nanometer scale. In this study, the effect of various plasma treatments performed at different stages during the ALD deposition of Al2O3/SiO2 multilayers on the silicon surface passivation quality is evaluated. Significant improvements in surface passivation quality for some plasma treatments are observed, particularly for single Al2O3/SiO2 bilayers treated with a H-2 plasma after SiO2 deposition. This treatment resulted in a surface recombination parameter J(0) as low as 0.35 fA cm(-)(2) on (100) surfaces of 10 ohm cm n-type silicon, more than a factor of 5 lower than that of Al2O3 single layers without plasma treatment. Capacitance-voltage measurements indicate that the improved surface passivation of the plasma-treated samples results from an enhanced chemical interface passivation rather than an improved field effect. In addition, a superior temperature stability of the surface passivation quality is found for various plasma-treated multilayers.

Automated summary

This study evaluates the effect of various plasma treatments during the ALD deposition of Al2O3/SiO2 multilayers on the passivation quality of the silicon surface. Plasma treatments after SiO2 deposition, particularly for single Al2O3/SiO2 bilayers treated with H-2 plasma, significantly improve the surface passivation quality. The improved passivation quality comes from enhanced chemical interface passivation rather than an improved field effect.