Carrier-Envelope Phase-Controlled Residual Current in Semiconductors

With the purpose of achieving current control by using intense laser field manipulation, we investigate the effect of carrier-envelope phase (CEP) on residual current in SiO2 crystals. By solving semiconductor Bloch equations, we found that the CEP can strongly influence the carrier population of the conduction band, which means that it can act as a simple, but useful, tool to control residual current. That is, the resultant asymmetric distribution in the first Brillouin zone gave rise to non-zero residual current. Additionally, we further consider the two-color laser scheme to achieve better control of residual current, showing that asymmetric two-color laser fields can induce the maximum residual current.

Automated summary

In order to achieve current control using intense laser field manipulation, we studied the effect of carrier-envelope phase (CEP) on residual current in SiO2 crystals. By solving semiconductor Bloch equations, we found that CEP can strongly influence the carrier population of the conduction band, providing a simple but useful tool for controlling residual current. The asymmetric distribution in the first Brillouin zone caused by CEP results in non-zero residual current. Furthermore, we investigated the two-color laser scheme and found that asymmetric two-color laser fields can induce the maximum residual current.