Investigation and Research of High-Performance RF MEMS Switches for Use in the 5G RF Front-End Modules

In this article, based on the developed methodology, the stages of designing two designs of high-performance radio-frequency single-pole single-throw microelectromechanical switches are investigated. These radio-frequency microelectromechanical switches are designed to operate at a central resonant frequency of 3.6 GHz and 3.4 GHz, respectively, as well as to work both in mobile communication devices and in the design of the architecture of 5G mobile networks, in particular in arrays of integrated antennas and radio-frequency interface modules. The manufacture and study of two designed structures are researched. For the first manufactured experimental sample in the open state the insertion loss is no more than -0.69 dB and the reflection loss is -28.35 dB, and in the closed state the isolation value is at least -54.77 dB at a central resonant frequency of 3.6 GHz. For the second in the open state the value of the insertion loss is no more than -0.67 dB and the reflection loss is -20.7 dB, and in the closed state the isolation value is not less than -52.13 dB at the central resonant frequency of 3.4 GHz. Both manufactured experimental samples are characterized by high linearity, as well as a small value of contact resistance in the closed state.

Automated summary

In this article, the stages of designing high-performance radio-frequency single-pole single-throw microelectromechanical switches for mobile communication devices and 5G mobile networks are investigated. The manufactured experimental samples demonstrate low insertion loss, high linearity, and small contact resistance in the closed state.