Journal
IEEE JOURNAL OF PHOTOVOLTAICS
Volume 13, Issue 3, Pages 398-403Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2023.3240680
Keywords
Stress; Photovoltaic cells; Temperature measurement; Electric breakdown; Substrates; Lasers; Measurement by laser beam; CIGS; electric breakdown; hotspot; reverse bias; thermal analysis
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The initial stages of hot-spot and defect creation in Cu(In,Ga)Se-2 solar cells due to reverse breakdown are not well understood. This study presents experimental evidence supporting the thesis that a positive feedback loop between local temperature and current density leads to thermal runaway and permanent damage.
The underlying mechanisms of the initial stages of hot-spot and therefore defect creation due to reverse breakdown in Cu(In,Ga)Se-2 solar cells are not well understood. We test the thesis, that permanent damage is created due to a positive feedback loop of local temperature enhancing the local current and vice versa, resulting in a thermal runaway. We present experiments on reverse stress with simultaneously introducing local heat. Depending on the temperature profile of the introduced heat, the local current density is enhanced and leads to a gain in the local temperature. This feedback loop is shown to lead to reverse breakdown, causing permanent damage.
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