Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 12, Issue 5, Pages -Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/acd65d
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This review article examines various CNTFET-based circuit designs, proposed and critically evaluated by the authors. The performance of these circuits in both CNTFET and CMOS technology is compared for some designs. A compact, semi-empirical model proposed by the authors is used for the CNTFET model, while the BSIM4 model from the ADS library is used for the MOSFET model. Additionally, the authors compare their results with those obtained using the Stanford model in some design examples. All simulations are performed using the Advanced Design System (ADS) software, which is compatible with the Verilog-A programming language.
In this review we present many design of CNTFET-based circuits, already proposed by us and here critically examined. For some of these, we compare the performance of proposed circuits both in CNTFET and CMOS technology. For CNTFET model, we use a compact, semi-empirical model, already proposed by us and briefly recalled, while, for the MOSFET model, we use the BSIM4 one of ADS library. Moreover in some design examples we compare our results with those obtained using the Stanford model. All simulations are carried out using the software Advanced Design System (ADS), which is compatible with the Verilog-A programming language.
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