4.6 Article

In-Plane Integrating Unidirectional 1D CsPbBr3 Waveguide Arrays with Heterogeneous Semiconductor Wires for Photonic Integrated Circuits

Journal

ADVANCED OPTICAL MATERIALS
Volume -, Issue -, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202300596

Keywords

CsPbBr3; in-plane integrating; photodetectors; photonic integrated circuits; waveguide arrays

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This study reports a universal method for efficiently integrating various semiconductor wires on a large scale, which involves in-plane integration of metal halide perovskite CsPbBr3 wire arrays with Sb2Se3, PbSe, and CdS wires on mica substrates. The CsPbBr3 wire arrays can act as both the light emitting media and waveguide, guiding the emission into the backbone Sb2Se3 wire. The constructed CsPbBr3 waveguide arrays/Sb2Se3 wire photodetector system exhibits a photocurrent of 73.4 nA with an on/off ratio of 111, and a rapid response speed.
1D semiconductor wires have great potential in on-chip integrated photonics systems. However, it is still challenging to efficiently integrate various semiconductor wires on a large scale for complex functional devices. This study reports a universal route to in-plane integrate unidirectional metal halide perovskite CsPbBr3 wire arrays with Sb2Se3, PbSeand CdS wires on mica substrates, respectively. It is found that the growth of the unidirectional wire arrays is controlled by a synergistic effect of the promoted initial nucleation on the transferred heterogeneous wires and the thermodynamically favored epitaxy on mica. The optical characterizations show that the CsPbBr3 wire arrays can act as both the light emitting media and waveguide, where the emission in the CsPbBr3 wires can be efficiently guided into the backbone Sb2Se3 wire. Importantly, the constructed CsPbBr3 waveguide arrays/Sb2Se3 wire photodetector system shows 73.4 nA photocurrent with the on/off ratio of 111, by exciting the CsPbBr3 wires at 174 mW cm(-2) of 405 nm laser. The frequency dependent photoresponse characterizations exhibit a response capability of 2000 Hz modulated laser pulse and a 3 dB frequency above 300 Hz, indicating the rapid response speed. This study promotes the application of semiconductor wires in on-chip multifunctional integrated photonic devices.

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