Growth of Ultrafine Si Embedded SiO2 Nanowires by Pt Catalyst

Ultrafine Si embedded SiO2 nanowires have been prepared by thermal evaporation using Pt catalyst. The ultrafine Si embedded SiO2 nanowires with a diameter of about 10 nm were grown in-situ on the Si substrate, conforming to a vapor-liquid-solid growth mechanism. On account of the existence of the quantum confinement effect, the absorption edge of the ultrafine Si embedded SiO2 nanowires is slightly larger. The photoluminescence result reveals a blue shift in the ultrafine nanowires, which may also be due to the quantum confinement effect caused by the small size. The Pt-related light emission characteristics will enable the development of nanowires in the field of optoelectronics.

Automated summary

Ultrafine Si embedded SiO2 nanowires were prepared by thermal evaporation with Pt catalyst, and grown in-situ on Si substrate, exhibiting a vapor-liquid-solid growth mechanism. The ultrafine Si embedded SiO2 nanowires show a slightly larger absorption edge due to the quantum confinement effect. The photoluminescence results indicate a blue shift in the ultrafine nanowires, which can be attributed to the quantum confinement effect caused by their small size. The Pt-related light emission characteristics will drive the development of nanowires in optoelectronics.