Effects of Al doping on dislocation inclinations and strain of GaN films on Si substrates

We present how the interaction between Al dopants and threading dislocations affects dislocation inclinations and then plays an important role in controlling residual strain in GaN-on-Si epitaxial films. When the Al concentration in the GaN epitaxial film is increased to 0.85%, the dislocations extend almost in the growth direction, contributing to a strain-free epitaxial film. We suggest that the Al atoms could substitute for Ga vacancies at the dislocation cores on the growth surface and then inhibit the dislocation inclinations. The suppressed dislocation inclinations lead to a reduced relaxation of compressive strain. The results pave a new way to control dislocation movements and strain in GaN epitaxial films on Si substrates.

Automated summary

We present the impact of Al dopants and threading dislocations on dislocation inclinations and their role in controlling residual strain in GaN-on-Si epitaxial films. Increasing the Al concentration in the GaN film to 0.85% results in dislocations extending predominantly in the growth direction, leading to a strain-free epitaxial film. Our findings suggest that Al atoms can substitute for Ga vacancies at dislocation cores and inhibit dislocation inclinations, thereby reducing compressive strain relaxation. These results offer a novel approach to control dislocation movements and strain in GaN epitaxial films on Si substrates.