4.4 Article

Temperature-dependent Poole-Frenkel transport properties of the SrSnO3/Nb-doped SrTiO3 heterostructure

Journal

AIP ADVANCES
Volume 13, Issue 5, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0149807

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All-perovskite oxide heterostructure of SrSnO3/Nb-doped SrTiO3 was fabricated and investigated for its unusual transport properties. Diodelike rectifying behavior was observed in the forward current while the temperature-dependent IV curves showed tunneling effects in the reverse bias. The electrical transport mechanism was explained using the thermionic emission model and the Poole-Frenkel emission.
All-perovskite oxide heterostructure of SrSnO3/Nb-doped SrTiO3 was fabricated by using the pulsed laser deposition method. Unusual transport properties of the interface between SrSnO3 and Nb-doped SrTiO3 have been investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior has been demonstrated by the temperature-dependent current-voltage (IV) measurements. The forward current showed typical IV characteristics of p-n junctions or Schottky diodes and was perfectly fitted using the thermionic emission model. At the reverse bias, however, the temperature-dependent IV curves developed in the opposite direction, indicating the tunneling effects on the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

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