Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer

Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the lack of fundamental of behind mechanism. Here, we revealed that the degradation of endurance characteristics of pentacene OFET with poly(2-vinyl naphthalene) (PVN) as charge-storage layer is dominated by the deep hole-traps in PVN by using the photo-stimulated charge de-trapping technique with the fiber-coupled monochromatic-light probes. The depth distribution of hole-traps in PVN film of pentacene OFET is also provided.

Automated summary

Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric show potential for practical applications due to their low cost, light weight, and flexibility. However, their endurance characteristics are still a major challenge. This study reveals that the degradation of endurance characteristics in pentacene OFET with poly(2-vinyl naphthalene) (PVN) as the charge-storage layer is mainly caused by deep hole-traps in PVN. The depth distribution of these hole-traps in the PVN film of the pentacene OFET is also provided.