In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers

We demonstrate in-plane gate transistors based on the molybdenum disulfide (MoS2)/graphene hetero-structure. The graphene works as channels while MoS2 functions as passivation layers. The weak hysteresis of the device suggests that the MoS2 layer can effectively passivate the graphene channel. The characteristics of devices with and without removal of MoS2 between electrodes and graphene are also compared. The device with direct electrode/graphene contact shows a reduced contact resistance, increased drain current, and enhanced field-effect mobility. The higher field-effect mobility than that obtained through Hall measurement indicates that more carriers are present in the channel, rendering it more conductive.

Automated summary

In this study, in-plane gate transistors based on a MoS2/graphene heterostructure were demonstrated. The graphene functioned as the channel while the MoS2 acted as a passivation layer. The results showed that the MoS2 effectively passivated the graphene channel, resulting in weak hysteresis of the device. Additionally, comparison studies between devices with and without removal of the MoS2 layer revealed that the device with direct electrode/graphene contact exhibited lower contact resistance, higher drain current, and enhanced field-effect mobility, indicating the presence of more carriers in the channel for better conductivity.