Insights into the photovoltaic properties of indium sulfide as an electron transport material in perovskite solar cells

According to recent reports, planar structure-based organometallic perovskite solar cells (OPSCs) have achieved remarkable power conversion efficiency (PCE), making them very competitive with the more traditional silicon photovoltaics. A complete understanding of OPSCs and their individual parts is still necessary for further enhancement in PCE. In this work, indium sulfide (In2S3)-based planar heterojunction OPSCs were proposed and simulated with the SCAPS (a Solar Cell Capacitance Simulator)-1D programme. Initially, OPSC performance was calibrated with the experimentally fabricated architecture (FTO/In2S3/ MAPbI(3)/Spiro-OMeTAD/Au) to evaluate the optimum parameters of each layer. The numerical calculations showed a significant dependence of PCE on the thickness and defect density of the MAPbI(3) absorber material. The results showed that as the perovskite layer thickness increased, the PCE improved gradually but subsequently reached a maximum at thicknesses greater than 500 nm. Moreover, parameters involving the series resistance as well as the shunt resistance were recognized to affect the performance of the OPSC. Most importantly, a champion PCE of over 20% was yielded under the optimistic simulation conditions. Overall, the OPSC performed better between 20 and 30 degrees C, and its efficiency rapidly decreases above that temperature.

Automated summary

According to recent reports, planar structure-based organometallic perovskite solar cells (OPSCs) have achieved remarkable power conversion efficiency (PCE), making them very competitive with the more traditional silicon photovoltaics. In this study, indium sulfide (In2S3)-based planar heterojunction OPSCs were proposed and simulated using the SCAPS-1D program. The numerical calculations revealed the significant influence of MAPbI(3) absorber material's thickness and defect density on PCE. The results showed that PCE gradually improved with increasing perovskite layer thickness, reaching a maximum value at thicknesses greater than 500 nm.