4.7 Article

Tuning of the band gap and dielectric loss factor by Mn doping of Zn1-xMnxO nanoparticles

Journal

SCIENTIFIC REPORTS
Volume 13, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41598-023-35456-2

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This study investigated the structural, optical, and dielectric properties of Pure and Mn+2 doped ZnO nanoparticles (Zn1-xMnxO) with x>=20%. The nanoparticles were synthesized using the co-precipitation method and annealed at 450(0)C. Different characterization techniques were employed to analyze the prepared nanoparticles. X-ray Diffraction analysis revealed a hexagonal wurtzite structure for both pure and Mn+2 doped ZnO. The size of the crystallites decreased as the doping concentration increased. Scanning Electron Microscopy showed that the nanoparticles were finely dispersed and had a particle size of 40-50 nm. Energy Dispersive X-ray spectroscopy confirmed the incorporation of Mn(+2) ions in the ZnO structure. UV spectroscopy results indicated a red shift in the band gap as the doping concentration increased, with the band gap changing from 3.3 to 2.75 eV. Dielectric measurements showed a decrease in relative permittivity, dielectric loss factor, and ac conductivity with increasing Mn concentration.
This study explored the structural, optical, and dielectric properties of Pure and Mn+2 doped ZnO nano-particles (Zn1-xMnxO) with x >= 20%, synthesized by co-precipitation method followed by annealing at 450(0)C. Different characterization techniques were conducted to characterize the as-prepared nano-particles. X-ray Diffraction analysis of the pure and Mn+2 doped presented a hexagonal wurtzite structure and a decreased crystallite size with increasing doping concentration. Morphological analysis from SEM revealed finely dispersed spherical nanoparticles with particle size of 40-50 nm. Compositional analysis from EDX confirmed the incorporation of Mn(+2)ions in ZnO structure. The Results of UV spectroscopy showed that changing the doping concentration affects the band gap, and a red shift is observed as the doping concentration is increased. The band gap changes from 3.3 to 2.75 eV. Dielectric measurements exhibited decrease in the relative permittivity, dielectric loss factor and ac conductivity by increasing Mn concentration.

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