Bound exciton luminescence and phonon sideband analysis of iodine intercalated bulk 2H-MoSe2 crystals

Article Physics, Applied

Excitonic luminescence of iodine-intercalated HfS2

N. Zawadzka et al.

Summary: Photoluminescence from bulk HfS2 grown by the chemical vapor transport method is studied. A series of emission lines are observed at low temperature in the energy range of 1.4-1.5 eV. Intensity correlation analysis distinguishes two groups of observed excitonic transitions and their replicas involving acoustic and optical phonons. The emission is attributed to the recombination of excitons bound to iodine (I-2) molecules intercalated between layers of HfS2. The presence of I-2 molecules in the crystal is confirmed by secondary ion mass spectroscopy.

APPLIED PHYSICS LETTERS (2023)

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Article Materials Science, Multidisciplinary

Raman scattering with infrared excitation resonant with the MoSe2 indirect band gap

Simone Sotgiu et al.

Summary: In this study, we investigated the Raman modes in MoSe2 using resonance Raman scattering and found that the intensity of high-order modes is enhanced at an excitation energy of 1.16 eV. By comparing experimental results with theoretical calculations, we identified that the high-order modes mostly originate from two-phonon modes with opposite momenta. We also observed that lowering the crystal temperature actively suppresses the intensity of resonant two-phonon modes.

PHYSICAL REVIEW B (2022)

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Review Optics