Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films

Carbon nanotube-based derivatives have attracted considerable research interest due to their unique structure and fascinating physicochemical properties. However, the controlled growth mechanism of these derivatives remains unclear, and the synthesis efficiency is low. Herein, we proposed a defect-induced strategy for the efficient heteroepitaxial growth of single-wall carbon nanotubes (SWCNTs)@hexagonal boron nitride (h-BN) films. Air plasma treatment was first performed to generate defects on the wall of SWCNTs. Then, atmospheric pressure chemical vapor deposition was conducted to grow h-BN on the surface of SWCNTs. Controlled experiments combined with first-principles calculations revealed that the induced defects on the wall of SWCNTs function as nucleation sites for the efficient heteroepitaxial growth of h-BN.

Automated summary

Carbon nanotube-based derivatives with unique structure and physicochemical properties have been extensively researched. However, the controlled growth mechanism and synthesis efficiency of these derivatives are still unclear. In this study, a defect-induced strategy was proposed for the efficient heteroepitaxial growth of SWCNTs@h-BN films. Air plasma treatment was used to generate defects on the SWCNTs' wall, and atmospheric pressure chemical vapor deposition was performed to grow h-BN on the SWCNTs' surface. Controlled experiments and first-principles calculations revealed that the induced defects on the SWCNTs' wall serve as nucleation sites for efficient heteroepitaxial growth of h-BN.