Au-Hyperdoped Si Nanolayer: Laser Processing Techniques and Corresponding Material Properties

The absorption of light in the near-infrared region of the electromagnetic spectrum by Au-hyperdoped Si has been observed. While silicon photodetectors in this range are currently being produced, their efficiency is low. Here, using the nanosecond and picosecond laser hyperdoping of thin amorphous Si films, their compositional (energy-dispersion X-ray spectroscopy), chemical (X-ray photoelectron spectroscopy), structural (Raman spectroscopy) and IR spectroscopic characterization, we comparatively demonstrated a few promising regimes of laser-based silicon hyperdoping with gold. Our results indicate that the optimal efficiency of impurity-hyperdoped Si materials has yet to be achieved, and we discuss these opportunities in light of our results.

Automated summary

The absorption of light in the near-infrared region by Au-hyperdoped Si is observed. Current silicon photodetectors in this range have low efficiency. Through laser hyperdoping of thin amorphous Si films, we characterize the composition, chemical, structural, and IR spectroscopic properties of hyperdoped Si with gold and demonstrate several promising regimes. It is found that the optimal efficiency of impurity-hyperdoped Si materials has not been achieved yet.