Effect of Manganese Alloying on Infrared Detectors Made of Pb1-xMnxTe/CdTe Multilayer Composite

The properties of Pb1-xMnxTe/CdTe multilayer composite grown by molecular beam epitaxy on a GaAs substrate were studied. The study included morphological characterization by X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, as well as electron transport and optical spectroscopy measurements. The main focus of the study was on the sensing properties of photoresistors made of Pb1-xMnxTe/CdTe in the infrared spectral region. It was shown that the presence of Mn in the Pb1-xMnxTe conductive layers shifted the cut-off wavelength toward blue and weakened the spectral sensitivity of the photoresistors. The first effect was due to an increase in the energy gap of Pb1-xMnxTe with an increase in Mn concentration, and the second was due to a pronounced deterioration in the crystal quality of the multilayers owing to the presence of Mn atoms, as shown by the morphological analysis.

Automated summary

The properties of Pb1-xMnxTe/CdTe multilayer composite grown on a GaAs substrate by molecular beam epitaxy were investigated. Morphological characterization, electron transport and optical spectroscopy measurements were conducted, along with X-ray diffraction, scanning electron microscopy, and secondary ion mass spectroscopy. The study focused on the sensing properties of photoresistors made of Pb1-xMnxTe/CdTe in the infrared spectral region. It was found that the presence of Mn in the conductive layers shifted the cut-off wavelength towards blue and weakened the spectral sensitivity of the photoresistors due to the increase in energy gap and deterioration in crystal quality caused by the presence of Mn atoms.