Modeling of the Stark shift and binding energy of shallow donor-impurity in GaAs/Al0.3Ga0.7As core/shell quantum disk: effects of lateral directed applied electric field including the core/shell sizes

Core/shell-shaped quantum nanostructures have been considered of great interest and promising systems for modern age and future electroluminescence and absorber devices. Thus, in the paper, we reported the Stark shift and binding energy of a shallow donor-impurity located in (GaAs/Ga1-?Al?As) core/shell inhomogeneous thin quantum disk under the influences of an oriented electric field taking into account the quantum disk dimensions effect (inner/outer radius). Within the framework of the effective-mass approximation, the Schrodinger equation in the system has been solved using the two-dimensional finite deference element method considering the Dirichlet and Neumann types boundary conditions between the Core and Shell materials. Our results reveal that the orientation of the applied lateral electric field and the quantum disk dimensions (size effect) have significant influences on both the Stark shift and impurity binding energy. These findings are of great interests to complete previous theoretical studies related to Stark shift and impurity binding energy in quantum dots. Therefore, it could be beneficial for electro-modulator devices that modulate the intensity of a light beam with requiring a specific voltage for applied electric field intensity in the range 0-50kv/cm.

Automated summary

In this paper, we investigated the Stark shift and binding energy of a shallow donor-impurity in (GaAs/Ga1-?Al?As) core/shell quantum disk. The results showed that the orientation of the applied electric field and the size of the quantum disk have significant effects on both the Stark shift and impurity binding energy. These findings are important for advancing the understanding of Stark shift and impurity binding energy in quantum dots.