Journal
NATURE COMMUNICATIONS
Volume 14, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41467-023-38446-0
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This study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of half-Heusler compounds, significantly improving the performance and showing promise for near-room-temperature thermoelectric applications.
To achieve optimal thermoelectric performance, it is crucial to manipulate the scattering processes within materials to decouple the transport of phonons and electrons. In half-Heusler (hH) compounds, selective defect reduction can significantly improve performance due to the weak electron-acoustic phonon interaction. This study utilized Sb-pressure controlled annealing process to modulate the microstructure and point defects of Nb0.55Ta0.40Ti0.05FeSb compound, resulting in a 100% increase in carrier mobility and a maximum power factor of 78 mu Wcm(-1) K-2, approaching the theoretical prediction for NbFeSb single crystal. This approach yielded the highest average zT of similar to 0.86 among hH in the temperature range of 300-873K. The use of this material led to a 210% enhancement in cooling power density compared to Bi2Te3-based devices and a conversion efficiency of 12%. These results demonstrate a promising strategy for optimizing hH materials for near-room-temperature thermoelectric applications.
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