Current-driven writing process in antiferromagnetic Mn2Au for memory applications

Antiferromagnets have an inbuilt resilience to external magnetic fields and intrinsically fast dynamics, properties that have garnered interest in the hope that they could be used for antiferromagnet memories. Central to this are Neel spin-orbit torques, which can switch the individual sublattices of the antiferromagnet. Here, Reimers et al demonstrate complete and reversible current induced switching of the Neel vector in Mn2Au. Current pulse driven Neel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Neel vector of epitaxial thin films of the prototypical compound Mn2Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of approximate to 20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Neel spin-orbit torque acting on the domain walls.

Automated summary

Researchers demonstrate complete and reversible current induced switching of the Neel vector in Mn2Au, a metallic antiferromagnet, which holds promise for antiferromagnet memories. This switching is achieved with low heating and provides a long-term stable domain pattern suitable for memory applications.