Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Doping technology with stable carrier concentration regulation is a guarantee for optimizing fl-Ga2O3-based high-power electronic devices and optoelectronic devices. In this study, fl-Ga2O3 homoepitaxial epitaxial films with stable and tunable electron concentrations were grown on Fe-doped (010)-oriented fl-Ga2O3 substrates by using metal-organic chemical vapor deposition (MOCVD). XRD shows that the basic bulk properties of fl-Ga2O3 film, i. e. the structure and crystal orientation, are stable with low Si-doping, however, its electrical properties vary remarkably depending on concentrations of Si ions incorporated by Si source flow rate during the film growth process. Hall measurement is utilized to confirm high-quality fl-Ga2O3 films with tunable electron con-centration of 1017-1019 cm-3. As a consequence, the electron concentration-dependent behavior of fl-Ga2O3 Schottky barrier diodes (SBDs) was studied. The fl-Ga2O3 SBDs exhibited better forward current output electrical performance with reduction in built-in potential difference (Vbi) from 2.4 V to 0.3 V and on-resistance (Ron) from 257 omega cm to 26 omega cm. Our results suggest that stable and tunable electron concentration provides high-quality material assurance for constructing power electronic devices of Ga2O3.

Automated summary

In this study, stable and tunable electron concentration in fl-Ga2O3 homoepitaxial epitaxial films was achieved by using metal-organic chemical vapor deposition (MOCVD) on Fe-doped (010)-oriented fl-Ga2O3 substrates. The electrical properties of the films were found to vary depending on the concentration of Si ions incorporated during the growth process. The results suggest that stable and tunable electron concentration is crucial for optimizing high-power electronic devices based on fl-Ga2O3.