4.4 Article

Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells

Journal

THIN SOLID FILMS
Volume 774, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2023.139840

Keywords

Indium oxide; Hydrogen -doped indium oxide; Sputtering; Transparent conductive oxide; Sheet resistance

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Typical Cu(In,Ga)Se2 solar cells use an opaque molybdenum back contact, but transparent back contacts are needed for applications such as bifacial, semi-transparent or tandem solar cells. Various transparent conductive oxides have been tested, including indium- or fluorine-doped tin oxide and hydrogen-doped indium oxide. This study investigates a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH), where hydrogen is supplied from an Ar/H2 gas and oxygen is pulsed during deposition. Optimum oxygen and Ar/H2 partial pressures are found, resulting in IOH films with high transparency and low sheet resistance after annealing.
Typical Cu(In,Ga)Se2 solar cells are deposited on an opaque molybdenum back contact. However, for applications such as bifacial, semi-transparent or tandem solar cells a transparent back contact is required, for which various transparent conductive oxides have been tested, such as indium- or fluorine-doped tin oxide, and hydrogen-doped indium oxide. Here, a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH) is investigated, where H is supplied from a Ar/H2 (5%) mixed gas and oxygen is pulsed during the entire deposition at room temperature. After deposition, the films are post-annealed in vacuum to optimize their optoelectronic properties. The oxygen plays an important role for the optoelectronic properties, where a high content of oxygen allows higher transparency but also increases the film sheet resistance. Optimum oxygen and Ar/H2 partial pressures of 3.2 x 10-2 Pa and 13x10-2 Pa, respectively, were found, producing IOH films with average visible transparency of 87% and sheet resistance after annealing of 19 Ohm/sq.

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