Graphene-based field-effect transistor using gated highest-k ferroelectric thin film

We report a graphene-based highest-k ferroelectric field-effect transistor (GFE-FET) in which few-layer graphene sheets (FLGS) act as a channel layer and highest-k ferroelectric like barium zirconium titanate/barium calcium titanate (BZT/BCT) acts as an insulating gate layer. The electrochemical and sol-gel method has been used to prepare the used good quality FLGS and excellent BZT/BCT ferroelectric materials. SEM, XRD, UV-Vis, FTIR, and Raman spectroscopy measurements were done to characterize the produced materials. In order to evaluate the mobility of the fabricated GFE-FET, FET was fabricated with BZT/BCT gate and FLGS on top of it as conducting channel. The resultant field-effect mobility obtained from the fabricated GFE-FET is approximately -1.72 x 104 cm2V-1s- 1 with 103 on/off ratio. These results ensure potential applications in some future high-speed electronic devices.

Automated summary

We have developed a graphene-based highest-k ferroelectric field-effect transistor (GFE-FET) with few-layer graphene sheets (FLGS) as the channel layer and high-k ferroelectric material such as barium zirconium titanate/barium calcium titanate (BZT/BCT) as the insulating gate layer. Various characterization techniques were used to confirm the quality of FLGS and BZT/BCT materials. The fabricated GFE-FET exhibited a field-effect mobility of approximately -1.72 x 104 cm2V-1s- 1 and an on/off ratio of 103, suggesting its potential applications in high-speed electronic devices.